公开(公告)号：US20190157214A1

公开(公告)日：2019-05-23

申请号：US16027484

申请日：2018-07-05

Applicant: Samsung Electronics Co. Ltd.

Inventor： Jun Kwan KIM ,  Sanghoon AHN ,  Kyu-Hee HAN ,  JaeWha PARK ,  Heesook PARK

IPC: H01L23/532 ,  H01L23/522

Abstract: Provided is a semiconductor device comprising a device region on a substrate, an interlayer dielectric layer on the device region, a first interface layer on a side of the interlayer dielectric layer, a low-k dielectric layer spaced apart from the interlayer dielectric layer across the first interface layer and having a dielectric constant less than that of the interlayer dielectric layer, and a conductive line in the low-k dielectric layer. The first interface layer comprises a first sub-interface layer in contact with the low-k dielectric layer, and a second sub-interface layer in contact with the interlayer dielectric layer. The second sub-interface layer has hydrogen permeability less than that of the first sub-interface layer.