公开(公告)号：US20130233823A1

公开(公告)日：2013-09-12

申请号：US13868515

申请日：2013-04-23

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Vladyslav Alexandrovich Vas'ko ,  Venkateswara Rao Inturi ,  Michael C. Kautzky ,  Zhihong Lu ,  Mark T. Kief ,  Yifan Zhang

IPC: G11B5/84

CPC classification number: G11B5/84 ,  G11B5/3912 ,  G11B5/398

Abstract: A magneto-resistive reader includes a first magnetic shield element, a second magnetic shield element and a magneto-resistive sensor stack separating the first magnetic shield element from the second magnetic shield element. The first shield element includes two ferromagnetic anisotropic layers separated by a grain growth suppression layer.

Abstract translation: 磁阻读取器包括第一磁屏蔽元件，第二磁屏蔽元件和将第一磁屏蔽元件与第二磁屏蔽元件分开的磁阻传感器堆叠。 第一屏蔽元件包括由晶粒生长抑制层分开的两个铁磁各向异性层。

公开(公告)号：US08945405B2

公开(公告)日：2015-02-03

申请号：US13868515

申请日：2013-04-23

Applicant: Seagate Technology LLC

Inventor： Vladyslav Alexandrovich Vas'ko ,  Venkateswara Rao Inturi ,  Michael C. Kautzky ,  Zhihong Lu ,  Mark T. Kief ,  Yifan Zhang

IPC: G11B5/11 ,  G11B5/84 ,  G11B5/39

CPC classification number: G11B5/84 ,  G11B5/3912 ,  G11B5/398

Abstract: A magneto-resistive reader includes a first magnetic shield element, a second magnetic shield element and a magneto-resistive sensor stack separating the first magnetic shield element from the second magnetic shield element. The first shield element includes two ferromagnetic anisotropic layers separated by a grain growth suppression layer.

Abstract translation: 磁阻读取器包括第一磁屏蔽元件，第二磁屏蔽元件和将第一磁屏蔽元件与第二磁屏蔽元件分开的磁阻传感器堆叠。 第一屏蔽元件包括由晶粒生长抑制层分开的两个铁磁各向异性层。