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    ULTRAHIGH LINEAR DENSITY SENSOR
    5.
    发明申请
    ULTRAHIGH LINEAR DENSITY SENSOR 有权
    ULTRAHIGH线性密度传感器

    公开(公告)号：US20150221326A1

    公开(公告)日：2015-08-06

    申请号：US14610771

    申请日：2015-01-30

    Applicant: Seagate Technology LLC

    Inventor： Wonjoon Jung ,  Dimitar V. Dimitrov ,  Mark T. Kief

    IPC: G11B5/33 ,  G11B5/31

    CPC classification number: G11B5/332 ,  G01R33/098 ,  G11B5/315 ,  G11B5/39 ,  G11B5/3906 ,  G11B5/3912 ,  H01L43/08 ,  H01L43/10

    Abstract: A data sensor may be configured with a magnetic stack disposed between first and second magnetic shields. The magnetic stack can have a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations. The first magnetically free lamination may have a first sub-layer constructed of a transition metal material and disposed between a second sub-layer constructed of a negative magnetostriction material and a third sub-layer constructed of a positive magnetostriction material.have a magnetic stack configured without a fixed magnetization structure and with a barrier layer disposed between first and second magnetically free layers. At least one magnetically free layer can be coupled to a magnetic shield by magnetic electrode and coupling layers with the coupling layer configured with at least a non-magnetic first coupling sub-layer disposed between a magnetic second coupling sub-layer and a magnetic third coupling sub-layer.

    Abstract translation: 数据传感器可以配置有设置在第一和第二磁屏蔽之间的磁性堆叠。 磁性堆叠可以具有通过第一和第二电极叠层分别耦合到第一和第二磁屏蔽的第一和第二无磁性层叠之间的非磁性间隔层。 第一无磁性层压体可以具有由过渡金属材料构成的第一子层，并且设置在由负磁致伸缩材料构成的第二子层和由正磁致伸缩材料构成的第三子层之间。 具有构造成没有固定磁化结构并且阻挡层设置在第一和第二无磁层之间的磁性堆叠。 至少一个无磁性层可以通过磁电极和耦合层耦合到磁屏蔽，耦合层配置有至少一个非磁性第一耦合子层，该非磁性第一耦合子层设置在磁性第二耦合子层和磁性第三耦合 子层。

    Positive and negative magnetostriction ultrahigh linear density sensor
    6.
    发明授权
    Positive and negative magnetostriction ultrahigh linear density sensor 有权
    正和负磁致伸缩超高线性密度传感器

    公开(公告)号：US09293159B2

    公开(公告)日：2016-03-22

    申请号：US14610771

    申请日：2015-01-30

    Applicant: Seagate Technology LLC

    Inventor： Wonjoon Jung ,  Dimitar V. Dimitrov ,  Mark T. Kief

    IPC: G11B5/39 ,  G11B5/33 ,  G11B5/31

    CPC classification number: G11B5/332 ,  G01R33/098 ,  G11B5/315 ,  G11B5/39 ,  G11B5/3906 ,  G11B5/3912 ,  H01L43/08 ,  H01L43/10

    Abstract: A data sensor may be configured with a magnetic stack disposed between first and second magnetic shields. The magnetic stack can have a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations. The first magnetically free lamination may have a first sub-layer constructed of a transition metal material and disposed between a second sub-layer constructed of a negative magnetostriction material and a third sub-layer constructed of a positive magnetostriction material.

    Abstract translation: 数据传感器可以配置有设置在第一和第二磁屏蔽之间的磁性堆叠。 磁性堆叠可以具有通过第一和第二电极叠层分别耦合到第一和第二磁屏蔽的第一和第二无磁性层叠之间的非磁性间隔层。 第一无磁性层压体可以具有由过渡金属材料构成的第一子层，并且设置在由负磁致伸缩材料构成的第二子层和由正磁致伸缩材料构成的第三子层之间。

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