CIRCUIT AND METHOD FOR MEASURING THE PERFORMANCE PARAMETERS OF TRANSISTORS
    1.
    发明申请
    CIRCUIT AND METHOD FOR MEASURING THE PERFORMANCE PARAMETERS OF TRANSISTORS 有权
    用于测量晶体管性能参数的电路和方法

    公开(公告)号:US20100045390A1

    公开(公告)日:2010-02-25

    申请号:US12543162

    申请日:2009-08-18

    Abstract: An integrated circuit may include an inverter which may include a first transistor of a first conductivity type and a second transistor of a second conductivity type connected in parallel with the first transistor. An input of the inverter may be capable of receiving an oscillating input signal, and which may include an output of the inverter, which is connected to a capacitive device capable of being charged and discharged depending on the state of the first and second transistors being on or off. The inverter may be capable of delivering an oscillating output signal at its output. The integrated circuit may include a selector for transmitting the oscillating output signal and for masking the charging and/or discharging of the capacitive device.

    Abstract translation: 集成电路可以包括可以包括与第一晶体管并联连接的第一导电类型的第一晶体管和第二导电类型的第二晶体管的反相器。 反相器的输入端可以能够接收振荡输入信号,并且其可以包括反相器的输出,该反相器的输出根据第一和第二晶体管的状态被连接到能够被充放电的电容器件 或关闭。 逆变器可以在其输出端输出振荡输出信号。 集成电路可以包括用于发送振荡输出信号并用于屏蔽电容性装置的充电和/或放电的选择器。

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