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公开(公告)号:US20210305927A1
公开(公告)日:2021-09-30
申请号:US16833871
申请日:2020-03-30
Applicant: Silicon Laboratories Inc.
Inventor: Asa S. Kirby , John N. Wilson
IPC: H02P27/06 , H02H7/08 , H02K11/20 , H02P29/024
Abstract: A system for controlling a high-power drive device includes a fault detection integrated circuit product configured to provide an indication of a fault condition associated with the high-power drive device to a first terminal in a first voltage domain in response to detecting the fault condition in a second voltage domain. The system includes a gate driver controller integrated circuit product configured to drive a second terminal coupled to a control node in a second voltage domain based on a control signal and an enable signal received from a third terminal in the first voltage domain. The second voltage domain is higher than the first voltage domain. The system may include a redundant fault reporting integrated circuit product or an additional fault detection integrated circuit product configured to detect a second fault condition in the second voltage domain that is different from the fault condition.
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公开(公告)号:US10917081B1
公开(公告)日:2021-02-09
申请号:US16815435
申请日:2020-03-11
Applicant: Silicon Laboratories Inc.
Inventor: Long Nguyen , Ion C. Tesu , Michael L. Duffy , John N. Wilson
IPC: H03K17/08 , H03K17/0812 , H02M1/08 , H03K17/18 , H03K17/082 , H03K17/081 , H03K17/16
Abstract: An apparatus controls a high-power drive device external to a package of a gate driver circuit. A first circuit charges the control node over a first length of time in response to a first signal through the first node indicating an absence of a fault condition and a first level of a control signal. A second circuit discharges the control node over a second length of time in response to a second signal through the second node indicating the absence of the fault condition and a second level of a control signal. A third circuit includes a current amplifier and is configured as a soft shutdown path to discharge the control node over a third length of time in response to the first signal through the first node indicating a presence of the fault condition. The third length of time is different from the second length of time.
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