公开(公告)号：US20150206788A1

公开(公告)日：2015-07-23

申请号：US14162309

申请日：2014-01-23

Applicant: Silicon Storage Technology, Inc.

Inventor： Jeng-Wei Wang ,  Chien-Sheng Su

IPC: H01L21/762 ,  H01L21/308

CPC classification number: H01L21/76224 ,  H01L21/3086 ,  H01L21/3088

Abstract: A method of forming active areas and isolation regions in a semiconductor substrate using a double patterning process. The method include forming a first material on the substrate surface, forming a second material on the first material, forming a plurality of first trenches into the second material wherein the plurality of first trenches are parallel to each other, forming a second trench into the second material wherein the second trench is perpendicular to and crosses the plurality of first trenches in a central region of the substrate, filling the first and second trenches with a third material, removing the second material to form third trenches in the third material that are parallel to each other and do not extend through the central region of the substrate, and extending the third trenches through the first material and into the substrate.

Abstract translation: 使用双重图案化工艺在半导体衬底中形成有源区和隔离区的方法。 该方法包括在衬底表面上形成第一材料，在第一材料上形成第二材料，在第二材料中形成多个第一沟槽，其中多个第一沟槽彼此平行，形成第二沟槽 材料，其中所述第二沟槽在所述衬底的中心区域中垂直于所述第一沟槽并与所述多个第一沟槽交叉，用第三材料填充所述第一和第二沟槽，移除所述第二材料以在所述第三材料中形成平行于所述第三材料的第三沟槽 彼此不延伸穿过衬底的中心区域，并且延伸第三沟槽穿过第一材料并进入衬底。