Etched facet in a multi quantum well structure

    公开(公告)号:US11624872B2

    公开(公告)日:2023-04-11

    申请号:US17539474

    申请日:2021-12-01

    Abstract: An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side. The first side may be defined in part by a first cleaved or diced facet. The first recess may be defined in part by a first etched facet. The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall. The second waveguide may be optically aligned with the first waveguide.

    Etched facet in a multi quantum well structure

    公开(公告)号:US11194092B2

    公开(公告)日:2021-12-07

    申请号:US16690483

    申请日:2019-11-21

    Abstract: An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side. The first side may be defined in part by a first cleaved or diced facet. The first recess may be defined in part by a first etched facet. The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall. The second waveguide may be optically aligned with the first waveguide.

    ETCHED FACET IN A MULTI QUANTUM WELL STRUCTURE

    公开(公告)号:US20230358951A1

    公开(公告)日:2023-11-09

    申请号:US18179167

    申请日:2023-03-06

    Abstract: An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side. The first side may be defined in part by a first cleaved or diced facet. The first recess may be defined in part by a first etched facet. The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall. The second waveguide may be optically aligned with the first waveguide.

    Self-aligned spot size converter
    6.
    发明授权

    公开(公告)号:US11360263B2

    公开(公告)日:2022-06-14

    申请号:US16777727

    申请日:2020-01-30

    Abstract: An optical device comprises a substrate, a waveguide disposed on the substrate, and a spot size converter (SSC) disposed on the substrate. The waveguide comprises a shoulder and a ridge. The SSC comprises a shoulder and a ridge. The ridge of the waveguide is aligned to a first stage of the ridge of the SSC. The waveguide is made of a first material. The shoulder and the ridge of the SSC are made of a second material. The second material is different from the first material.

    Multistage spot size converter in silicon photonics

    公开(公告)号:US11079549B2

    公开(公告)日:2021-08-03

    申请号:US16839826

    申请日:2020-04-03

    Abstract: A device is provided for optical mode spot size conversion to optically couple a semiconductor waveguide with an optical fiber. The device includes a waveguide comprising a waveguide taper region, which comprises a shoulder portion and a ridge portion above the shoulder portion. The ridge portion has a width that tapers to meet a width of the shoulder portion. The waveguide taper region comprises a first material. The device also has a mode converter coupled to the waveguide. The mode converter includes a plurality of stages, and each of the plurality of stages tapers in a direction similar to a direction of taper of the waveguide taper region. The mode converter is made of a second material different from the first material.

    Multistage spot size converter in silicon photonics

    公开(公告)号:US10649148B2

    公开(公告)日:2020-05-12

    申请号:US16171132

    申请日:2018-10-25

    Abstract: A device is provided for optical mode spot size conversion to optically couple a semiconductor waveguide with an optical fiber. The device includes a waveguide comprising a waveguide taper region, which comprises a shoulder portion and a ridge portion above the shoulder portion. The ridge portion has a width that tapers to meet a width of the shoulder portion. The waveguide taper region comprises a first material. The device also has a mode converter coupled to the waveguide. The mode converter includes a plurality of stages, and each of the plurality of stages tapers in a direction similar to a direction of taper of the waveguide taper region. The mode converter is made of a second material different from the first material.

    ETCHED FACET IN A MULTI QUANTUM WELL STRUCTURE

    公开(公告)号:US20220196911A1

    公开(公告)日:2022-06-23

    申请号:US17539474

    申请日:2021-12-01

    Abstract: An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side. The first side may be defined in part by a first cleaved or diced facet. The first recess may be defined in part by a first etched facet. The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall. The second waveguide may be optically aligned with the first waveguide.

    SELF-ALIGNED SPOT SIZE CONVERTER
    10.
    发明申请

    公开(公告)号:US20200301072A1

    公开(公告)日:2020-09-24

    申请号:US16777727

    申请日:2020-01-30

    Abstract: A method is provided for forming an optical device having a waveguide and a spot size converter (SSC). The method includes providing a crystalline semiconductor region and a non-crystalline semiconductor region on a substrate. The crystalline semiconductor region is coupled to the non-crystalline semiconductor region. The method also includes simultaneously etching the non-crystalline semiconductor region and the crystalline semiconductor region using a same etch mask to form a spot size converter coupled a waveguide. The waveguide has a ridge over a shoulder, and the spot size converter has a ridge over a shoulder.

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