公开(公告)号：US20250029923A1

公开(公告)日：2025-01-23

申请号：US18772766

申请日：2024-07-15

Applicant: Socionext Inc.

Inventor： Masato NAKOSHI

IPC: H01L23/528 ,  H01L23/00

Abstract: A semiconductor device includes a first pad; a first wiring connected to the first pad in a first direction in a plan view; a second wiring connected to the first pad in a second direction different from the first direction in the plan view; a second pad; a third wiring connected to the second pad in the first direction in the plan view; and a fourth wiring connected to the second pad in the second direction in the plan view. The second wiring is located between the third wiring and the first pad in the second direction, and the fourth wiring is located between the first wiring and the second pad in the second direction.