Conductive paste for semiconductor device and preparation method

    公开(公告)号:US10658090B2

    公开(公告)日:2020-05-19

    申请号:US16297620

    申请日:2019-03-09

    Abstract: A front-side conductive paste for a crystalline silicon solar cell chip is provided. The front-side conductive paste for a crystalline silicon solar cell chip includes, in parts by weight, 80.0-93.0 parts of a metal powder, 6.0-15.0 parts of an organic carrier, and 1.0-5.0 parts of an oxide etching agent. The oxide etching agent contains at least 10-40% of MgO, 0.1-5% of PbO, and 5-30% of Li2O based on 100% by mole, with the molar ratio of MgO:PbO being 10:5˜40:0.1, and the mole ratio of MgO:Li2O being 10:30˜40:5. The metal powder forms good ohmic contact with crystalline silicon substrate during the sintering process of the front-side conductive paste applied overlying an insulation film on the substrate. Finally, a front-side electrode of low contact resistance, good electrical conductivity, and strong adhesion is obtained.

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