公开(公告)号：US20140187020A1

公开(公告)日：2014-07-03

申请号：US14133893

申请日：2013-12-19

Applicant: SunEdison, Inc.

Inventor： Jeffrey L. Libbert ,  Michael John Ries

IPC: H01L21/762

CPC classification number: H01L21/76254

Abstract: A method of preparing a monocrystalline donor substrate, the method comprising (a) implanting helium ions through the front surface of the monocrystalline donor substrate to an average depth D1 as measured from the front surface toward the central plane; (b) implanting hydrogen ions through the front surface of the monocrystalline donor substrate to an average depth D2 as measured from the front surface toward the central plane; and (c) annealing the monocrystalline donor substrate at a temperature sufficient to form a cleave plane in the monocrystalline donor substrate. The average depth D1 and the average depth D2 are within about 1000 angstroms.

Abstract translation: 一种制备单晶供体衬底的方法，所述方法包括（a）从所述单晶施体衬底的前表面将氦离子注入到从所述表面朝向中心平面测量的平均深度D1; （b）将氢离子从单晶供体衬底的前表面注入从前表面朝向中心平面测得的平均深度D2; 和（c）在足以在单晶供体衬底中形成解理面的温度下退火单晶供体衬底。 平均深度D1和平均深度D2在约1000埃以内。

公开(公告)号：US09281233B2

公开(公告)日：2016-03-08

申请号：US14133893

申请日：2013-12-19

Applicant: SunEdison, Inc.

Inventor： Jeffrey L. Libbert ,  Michael John Ries

IPC: H01L21/46 ,  H01L21/762

CPC classification number: H01L21/76254

Abstract: A method of preparing a monocrystalline donor substrate, the method comprising (a) implanting helium ions through the front surface of the monocrystalline donor substrate to an average depth D1 as measured from the front surface toward the central plane; (b) implanting hydrogen ions through the front surface of the monocrystalline donor substrate to an average depth D2 as measured from the front surface toward the central plane; and (c) annealing the monocrystalline donor substrate at a temperature sufficient to form a cleave plane in the monocrystalline donor substrate. The average depth D1 and the average depth D2 are within about 1000 angstroms.

Abstract translation: 一种制备单晶供体衬底的方法，所述方法包括（a）从所述单晶施体衬底的前表面将氦离子注入到从所述表面朝向中心平面测量的平均深度D1; （b）将氢离子从单晶供体衬底的前表面注入从前表面朝向中心平面测得的平均深度D2; 和（c）在足以在单晶供体衬底中形成解理面的温度下退火单晶供体衬底。 平均深度D1和平均深度D2在约1000埃以内。

公开(公告)号：US09202711B2

公开(公告)日：2015-12-01

申请号：US14209083

申请日：2014-03-13

Applicant: SunEdison Inc.

Inventor： Qingmin Liu ,  Jeffrey L. Libbert

IPC: H01L21/324 ,  H01L21/762 ,  H01L21/322 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01L21/3247 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3226 ,  H01L21/76254

Abstract: A method for reducing light point defects of a semiconductor-on-insulator structure and a method for reducing the surface roughness of a semiconductor-on-insulator structure are disclosed. The methods can include a combination of thermally annealing the structure followed by a non-contact smoothing process.

Abstract translation: 公开了一种用于减少绝缘体上半导体结构的光点缺陷的方法和用于降低绝缘体上半导体结构的表面粗糙度的方法。 该方法可以包括对退火结构进行非接触平滑处理的组合。

公开(公告)号：US20140273405A1

公开(公告)日：2014-09-18

申请号：US14209083

申请日：2014-03-13

Applicant: SunEdison Inc.

Inventor： Qingmin Liu ,  Jeffrey L. Libbert

IPC: H01L21/324 ,  H01L21/322

CPC classification number: H01L21/3247 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3226 ,  H01L21/76254

Abstract: A method for reducing light point defects of a semiconductor-on-insulator structure and a method for reducing the surface roughness of a semiconductor-on-insulator structure are disclosed. The methods can include a combination of thermally annealing the structure followed by a non-contact smoothing process.

Abstract translation: 公开了一种用于减少绝缘体上半导体结构的光点缺陷的方法和用于降低绝缘体上半导体结构的表面粗糙度的方法。 该方法可以包括对退火结构进行非接触平滑处理的组合。