公开(公告)号：US09202711B2

公开(公告)日：2015-12-01

申请号：US14209083

申请日：2014-03-13

Applicant: SunEdison Inc.

Inventor： Qingmin Liu ,  Jeffrey L. Libbert

IPC: H01L21/324 ,  H01L21/762 ,  H01L21/322 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01L21/3247 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3226 ,  H01L21/76254

Abstract: A method for reducing light point defects of a semiconductor-on-insulator structure and a method for reducing the surface roughness of a semiconductor-on-insulator structure are disclosed. The methods can include a combination of thermally annealing the structure followed by a non-contact smoothing process.

Abstract translation: 公开了一种用于减少绝缘体上半导体结构的光点缺陷的方法和用于降低绝缘体上半导体结构的表面粗糙度的方法。 该方法可以包括对退火结构进行非接触平滑处理的组合。

公开(公告)号：US20140273405A1

公开(公告)日：2014-09-18

申请号：US14209083

申请日：2014-03-13

Applicant: SunEdison Inc.

Inventor： Qingmin Liu ,  Jeffrey L. Libbert

IPC: H01L21/324 ,  H01L21/322

CPC classification number: H01L21/3247 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3226 ,  H01L21/76254

Abstract: A method for reducing light point defects of a semiconductor-on-insulator structure and a method for reducing the surface roughness of a semiconductor-on-insulator structure are disclosed. The methods can include a combination of thermally annealing the structure followed by a non-contact smoothing process.

Abstract translation: 公开了一种用于减少绝缘体上半导体结构的光点缺陷的方法和用于降低绝缘体上半导体结构的表面粗糙度的方法。 该方法可以包括对退火结构进行非接触平滑处理的组合。