公开(公告)号：US20210408269A1

公开(公告)日：2021-12-30

申请号：US16758051

申请日：2020-01-07

Applicant: TCL China Star Optoelectronics Technology Co., Ltd.

Inventor： Huafei XIE ,  Shujhih CHEN ,  Chiayu LEE

IPC: H01L29/66 ,  H01L21/02 ,  H01L51/00 ,  H01L27/28

Abstract: The present disclosure provides a manufacturing method of a complementary metal-oxide-semiconductor (CMOS) inverter includes annealing a substrate printed with an oxide ink to obtain a first active layer, printing a carbon tube ink between a first source and the first drain to form a second active layer for obtaining a first thin-film transistor (TFT), forming a second source and a second drain on two sides of the first active layer to obtain a second TFT, and forming wires between the first TFT and the second TFT.

公开(公告)号：US20210366989A1

公开(公告)日：2021-11-25

申请号：US16627352

申请日：2019-12-23

Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Huafei XIE

IPC: H01L27/28 ,  H01L51/00 ,  H01L51/05 ,  H01L51/10

Abstract: A thin film transistor, a manufacturing method of the same, and a CMOS inverter are provided. The thin film transistor includes a base substrate, a dielectric layer, and a semiconductor layer. A first channel is provided between the source and the drain. Carbon nanotubes are provided in the first channel. A second channel is provided between the drain and the gate. An ion gel is provided in the second channel. By regulating a composition of the ion gel and a content of a dopant, a threshold voltage of a carbon nanotube thin film transistor is effectively controlled.