Abstract:
A rotation detection apparatus includes a magnetic field generation source, a spin valve element, and a calculator. The magnetic field generation source is rotatable while generating a magnetic field, and has a temperature coefficient of residual magnetic flux density having an absolute value of 0.1%/° C. or less. The spin valve element includes a magnetic layer configured to generate a movement of a magnetic domain wall in accordance with a change in direction of the magnetic field associated with a rotation of the magnetic field generation source. The calculator is configured to detect a change in resistance of the spin valve element caused by the movement of the magnetic domain wall and to calculate the number of rotations or a rotation angle of the magnetic field generation source.
Abstract:
A magnetic sensor includes an MR element and a bias magnetic field generation unit. The MR element includes a magnetization pinned layer, a nonmagnetic layer and a free layer stacked along Z direction. The bias magnetic field generation unit includes a first antiferromagnetic layer, a ferromagnetic layer and a second antiferromagnetic layer stacked along the Z direction. The bias magnetic field generation unit has a first end face and and a second end face located at opposite ends in the Z direction. The MR element is placed such that the entirety of the MR element is contained in a space formed by shifting an imaginary plane equivalent to the first end face of the bias magnetic field generation unit away from the second end face along the Z direction.
Abstract:
An electronic component package has an outer edge including a first side and a second side adjacent to each other. The electronic component package includes a first electronic component chip, a second electronic component chip provided at a distance from the first electronic component chip, one or more first terminals disposed along the first side, one or more second terminals disposed along the second side, and one or more first conductors. The one or more first conductors couple the one or more first terminals to the first electronic component chip, with the one or more first terminals being uncoupled to the second electronic component chip.
Abstract:
A magnetic sensor includes an MR element and two bias magnetic field generation units. The two bias magnetic field generation units are spaced apart from each other along a first direction and configured to cooperate with each other to generate a bias magnetic field. Each bias magnetic field generation unit includes a ferromagnetic layer and an antiferromagnetic layer stacked along a second direction orthogonal to the first direction. An element placement region is formed between the two bias magnetic field generation units when viewed in the second direction in an imaginary plane perpendicular to the second direction and intersecting the MR element. The element placement region includes a middle region and two end regions. The MR element is placed to lie within the middle region in the imaginary plane.
Abstract:
An electronic component package has an outer edge including a first side and a second side adjacent to each other. The electronic component package includes a first electronic component chip, a second electronic component chip provided at a distance from the first electronic component chip, one or more first terminals disposed along the first side, one or more second terminals disposed along the second side, and one or more first conductors. The one or more first conductors couple the one or more first terminals to the first electronic component chip, with the one or more first terminals being uncoupled to the second electronic component chip.
Abstract:
A magnetic sensor comprising a resin layer having a first surface and a second surface, which is opposite to the first surface and a magnetoresistive effect unit that detects a magnetic field in a predetermined direction, wherein the magnetoresistive effect unit includes at least a first magnetoresistive effect unit that detects a magnetic field in a first direction, the first direction is a direction orthogonal to the first surface of the resin layer, an inclined surface that is inclined at a predetermined angle with respect to the first surface is formed in the first surface of the resin layer, and the first magnetoresistive effect unit is formed in the inclined surface.
Abstract:
A magnetic sensor includes a plurality of magnetic detection elements, and a plurality of magnetic field generators associated with the plurality of magnetic detection elements. Each of the plurality of magnetic field generators includes a first ferromagnetic material section and a first antiferromagnetic material section. The first antiferromagnetic material section is in contact with and exchange-coupled to the first ferromagnetic material section. The first ferromagnetic material section has an overall magnetization. The plurality of magnetic field generators includes first and second magnetic field generators configured so that the overall magnetization of the first ferromagnetic material section of the first magnetic field generator is in a different direction from the overall magnetization of the first ferromagnetic material section of the second magnetic field generator.
Abstract:
A magnetic sensor includes an MR element and two stacks. The two stacks are spaced apart from each other along a first direction. Each stack includes a ferromagnetic layer and an antiferromagnetic layer stacked along a second direction orthogonal to the first direction. An element placement region is formed between the two stacks when viewed in the second direction. The element placement region includes a middle region and two end regions. The MR element is placed to lie within the middle region.
Abstract:
A magnetic field generator includes a plurality of magnetic field generation units arranged in a predetermined pattern to generate a plurality of external magnetic fields. Each of the plurality of magnetic field generation units includes a first ferromagnetic material section and a first antiferromagnetic material section. The first antiferromagnetic material section is in contact with and exchange-coupled to the first ferromagnetic material section. The first ferromagnetic material section has its overall magnetization. The plurality of magnetic field generation units include two magnetic field generation units configured so that the overall magnetizations of their respective first ferromagnetic material sections are in different directions from each other.