DIELECTRIC COMPOSITION AND MULTILAYER CERAMIC ELECTRONIC DEVICE

    公开(公告)号:US20220380257A1

    公开(公告)日:2022-12-01

    申请号:US17748524

    申请日:2022-05-19

    Abstract: A dielectric composition includes dielectric particles, grain boundary phases, and segregations. The dielectric particles each include a perovskite compound represented by ABO3 as a main component. The grain boundary phases are located between the dielectric particles. The segregations exist in a part of the grain boundary phases and include at least Al, Si, and O. A molar ratio (Al/(Al+Si)) of an Al content to a total content of Al and Si in the segregations is 0.45 or more and 0.75 or less.

    CERAMIC ELECTRONIC DEVICE
    5.
    发明申请

    公开(公告)号:US20220293343A1

    公开(公告)日:2022-09-15

    申请号:US17685018

    申请日:2022-03-02

    Abstract: A ceramic electronic device includes an element body and an external electrode. The element body is formed by laminating a ceramic layer and an internal electrode layer. The external electrode is electrically connected to at least one end of the internal, electrode layer. The element body includes a boundary layer at an end of the ceramic layer. The ceramic layer includes a perovskite compound represented by ABO3 as a main component. The boundary layer includes Ba and Ti as a main component. The boundary layer includes 0.27-0.40 parts by mol of Ba, provided that a total of Ba and Ti included in the boundary layer is 1 part by mol.

    CERAMIC ELECTRONIC DEVICE
    6.
    发明申请

    公开(公告)号:US20220285096A1

    公开(公告)日:2022-09-08

    申请号:US17683518

    申请日:2022-03-01

    Abstract: A ceramic electronic device includes an element body and an external electrode. The element body is formed by laminating a ceramic layer and an internal electrode layer. The external electrode is electrically connected to at least one end of the internal electrode layer. At least a part of a joint boundary between the electrode layer and the ceramic layer includes an interface protrusion on the external electrode side. The interface protrusion is made of an oxide.

    MULTILAYER ELECTRONIC DEVICE
    7.
    发明公开

    公开(公告)号:US20230245824A1

    公开(公告)日:2023-08-03

    申请号:US18071077

    申请日:2022-11-29

    Inventor: Yuichiro SUEDA

    CPC classification number: H01G4/1209 H01G4/30

    Abstract: A multilayer electronic device, including an element body constituted by alternately laminating dielectric layers and internal electrode layers, in which: a molar ratio of MgO to SiO2 in the dielectric layer is 1 to 5, a molar ratio of MgO to MnO in the dielectric layer is 5 to 13, the element body contains a segregation phase, and assuming that a total amount of MgO, NiO, MnO, Cr2O3, and SiO2 in the segregation phase is 100 molar parts, an amount of MgO in the segregation phase is 63.0 to 99.5 molar parts, and an amount of MnO in the segregation phase is 0.5 to 12.6 molar parts.

    CERAMIC ELECTRONIC DEVICE
    9.
    发明申请

    公开(公告)号:US20220293344A1

    公开(公告)日:2022-09-15

    申请号:US17683602

    申请日:2022-03-01

    Abstract: A ceramic electronic device includes an element body and an external electrode. The element body includes a ceramic layer and an internal electrode layer. The external electrode is formed on an end surface of the element body and electrically connected to a part of the internal electrode layer. The ceramic layer includes a perovskite compound represented by ABO3 as a main component. The external electrode includes a baked electrode layer having a first region and a second region. The first region is contacted with the end surface of the element body and located near a joint boundary with the element body. The second region is located outside the first region and constitutes an outer surface of the baked electrode layer. The first region includes a glass frit including at least B and Si. The second region includes an Al based oxide mainly including Al.

    CERAMIC ELECTRONIC DEVICE
    10.
    发明申请

    公开(公告)号:US20220285098A1

    公开(公告)日:2022-09-08

    申请号:US17683897

    申请日:2022-03-01

    Abstract: A ceramic electronic device includes an element body and an external electrode. The element body includes a ceramic layer and an internal electrode layer. The external electrode is formed on an end surface of the element body and electrically connected to a part of the internal electrode layer. The ceramic layer includes a perovskite compound represented by ABO3 as a main component. The external electrode includes a conductor and a glass frit diffused in the conductor. The glass frit includes B, Si, Ba, and Zn. A boundary layer is present at an end of the ceramic layer in contact with the external electrode on the end surface of the element body and comprises an oxide including Ba, Zn, and Si.

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