公开(公告)号：US20240407175A1

公开(公告)日：2024-12-05

申请号：US18326939

申请日：2023-05-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Scott R. SUMMERFELT ,  Michael BALL ,  John RODRIGUEZ ,  Nagesh SURENDRANATH ,  Antoine Lourdes Praveen AROUL ,  Eduardo BARTOLOME

IPC: H10B53/40 ,  G11C11/22 ,  H10B53/30

Abstract: An apparatus includes: groups of ferroelectric memory bit cells; and memory interface circuitry having processing outputs and memory access terminals. The memory access terminals are coupled to the groups of ferroelectric memory bit cells. The memory interface circuitry is configured to: provide control signals via the memory access terminals to perform read operations on the groups of ferroelectric memory bit cells; receive first signals from the groups of ferroelectric memory bit cells via the memory access terminals from the read operations; and for each group of the groups of ferroelectric memory bit cells, provide second signals representing relationships between the first signals received from the group of ferroelectric memory bit cells and a respective reference voltage of the reference voltages at the processing outputs, the reference voltages representing different temperatures.