Stress reduction on stacked transistor circuits

    公开(公告)号:US12212317B2

    公开(公告)日:2025-01-28

    申请号:US18131009

    申请日:2023-04-05

    Abstract: A circuit includes a first transistor having first and second current terminals and a first control input, and a second transistor having third and fourth current terminals and a second control input. The third current terminal is connected to the second current terminal at an intermediate node and the fourth current terminal connected to a ground or supply node. In some cases, a third transistor is connected to the intermediate node to bias the intermediate rather than letting the intermediate node float. In other cases, a capacitor is connected to the intermediate node to reduce a negative voltage that might otherwise be present on the intermediate node.

    Stress reduction on stacked transistor circuits

    公开(公告)号:US11831309B2

    公开(公告)日:2023-11-28

    申请号:US16378742

    申请日:2019-04-09

    CPC classification number: H03K19/00315 H03K3/356113 H03K19/20

    Abstract: A circuit includes a first transistor having first and second current terminals and a first control input, and a second transistor having third and fourth current terminals and a second control input. The third current terminal is coupled to the second current terminal at an intermediate node. In some cases, a third transistor is connected to the intermediate node to bias the intermediate rather than letting the intermediate node float. In other cases, a capacitor is connected to the intermediate node to reduce a negative voltage that might otherwise be present on the intermediate node.

    STRESS REDUCTION ON STACKED TRANSISTOR CIRCUITS

    公开(公告)号:US20230238959A1

    公开(公告)日:2023-07-27

    申请号:US18131009

    申请日:2023-04-05

    CPC classification number: H03K19/00315 H03K19/20

    Abstract: A circuit includes a first transistor having first and second current terminals and a first control input, and a second transistor having third and fourth current terminals and a second control input. The third current terminal is connected to the second current terminal at an intermediate node and the fourth current terminal connected to a ground or supply node. In some cases, a third transistor is connected to the intermediate node to bias the intermediate rather than letting the intermediate node float. In other cases, a capacitor is connected to the intermediate node to reduce a negative voltage that might otherwise be present on the intermediate node.

    STRESS REDUCTION ON STACKED TRANSISTOR CIRCUITS

    公开(公告)号:US20240088896A1

    公开(公告)日:2024-03-14

    申请号:US18516256

    申请日:2023-11-21

    CPC classification number: H03K19/00315 H03K3/356113 H03K19/20

    Abstract: A circuit includes a first transistor having first and second current terminals and a first control input, and a second transistor having third and fourth current terminals and a second control input. The third current terminal is coupled to the second current terminal at an intermediate node. In some cases, a third transistor is connected to the intermediate node to bias the intermediate rather than letting the intermediate node float. In other cases, a capacitor is connected to the intermediate node to reduce a negative voltage that might otherwise be present on the intermediate node.

    Stress reduction on stacked transistor circuits

    公开(公告)号:US11626875B2

    公开(公告)日:2023-04-11

    申请号:US16262327

    申请日:2019-01-30

    Abstract: A circuit includes a first transistor having first and second current terminals and a first control input, and a second transistor having third and fourth current terminals and a second control input. The third current terminal is connected to the second current terminal at an intermediate node and the fourth current terminal connected to a ground or supply node. In some cases, a third transistor is connected to the intermediate node to bias the intermediate rather than letting the intermediate node float. In other cases, a capacitor is connected to the intermediate node to reduce a negative voltage that might otherwise be present on the intermediate node.

Patent Agency Ranking