公开(公告)号：US10544034B1

公开(公告)日：2020-01-28

申请号：US16042595

申请日：2018-07-23

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Nazila Dadvand ,  Kathryn Schuck

IPC: H01L23/52 ,  H01L29/40 ,  B81B7/00 ,  B81C1/00 ,  H01L23/00

Abstract: A semiconductor package including a semiconductor die and at least one bondline positioned on the semiconductor die, the at least one bondline comprising a nickel lanthanide alloy diffusion barrier layer abutting a gold layer.

公开(公告)号：US11091366B2

公开(公告)日：2021-08-17

申请号：US16774529

申请日：2020-01-28

Applicant: Texas Instruments Incorporated

Inventor： Nazila Dadvand ,  Kathryn Schuck

IPC: H01L23/52 ,  H01L29/40 ,  B81B7/00 ,  B81C1/00 ,  H01L23/00

Abstract: A semiconductor package including a semiconductor die and at least one bondline positioned on the semiconductor die, the at least one bondline comprising a nickel lanthanide alloy diffusion barrier layer abutting a gold layer.

公开(公告)号：US20200165124A1

公开(公告)日：2020-05-28

申请号：US16774529

申请日：2020-01-28

Applicant: Texas Instruments Incorporated

Inventor： Nazila Dadvand ,  Kathryn Schuck

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/00

Abstract: A semiconductor package including a semiconductor die and at least one bondline positioned on the semiconductor die, the at least one bondline comprising a nickel lanthanide alloy diffusion barrier layer abutting a gold layer.