专利检索 ap:("THALES" OR "COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (CEA)") AND inv:"Mourad OUALLI" 第 1 页

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发明申请
MULTILAYER PASSIVATION OF THE UPPER FACE OF THE STACK OF SEMICONDUCTOR MATERIALS OF A FIELD-EFFECT TRANSISTOR 审中-公开

公开(公告)号：US20180019334A1

公开(公告)日：2018-01-18

申请号：US15540993

申请日：2015-12-29

申请人： THALES , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (CEA)

发明人： Raphaël AUBRY , Jean-Claude JACQUET , Olivier PATARD , Nicolas MICHEL , Mourad OUALLI , Sylvain DELAGE

IPC分类号： H01L29/778 , H01L23/29 , H01L29/20 , H01L23/31

CPC分类号： H01L29/7787 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/7786 , H01L2924/0002 , H01L2924/00

摘要： A field-effect transistor comprising a stack of semiconductor materials, the upper face of the stack being covered with a passivation layer comprises two sub-layers: a first sub-layer extending over a second zone of low intensity comprising a first material with electric breakdown field Ecl1, the charge of the first sub-layer being strictly less than the charge of the upper face of the stack, a second sub-layer extending over a first zone of high intensity and covering the first sub-layer, the second sub-layer comprising a second material with electrical breakdown field Ecl2 strictly greater than Ecl1.