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1.
公开(公告)号:US20180019334A1
公开(公告)日:2018-01-18
申请号:US15540993
申请日:2015-12-29
发明人: Raphaël AUBRY , Jean-Claude JACQUET , Olivier PATARD , Nicolas MICHEL , Mourad OUALLI , Sylvain DELAGE
IPC分类号: H01L29/778 , H01L23/29 , H01L29/20 , H01L23/31
CPC分类号: H01L29/7787 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要: A field-effect transistor comprising a stack of semiconductor materials, the upper face of the stack being covered with a passivation layer comprises two sub-layers: a first sub-layer extending over a second zone of low intensity comprising a first material with electric breakdown field Ecl1, the charge of the first sub-layer being strictly less than the charge of the upper face of the stack, a second sub-layer extending over a first zone of high intensity and covering the first sub-layer, the second sub-layer comprising a second material with electrical breakdown field Ecl2 strictly greater than Ecl1.
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公开(公告)号:US20180308966A1
公开(公告)日:2018-10-25
申请号:US15769708
申请日:2016-10-27
发明人: Jean-Claude JACQUET , Piero GAMARRA , Stéphane PIOTROWICZ , Cédric LACAM , Marie-Antoinette POISSON , Olivier PATARD
IPC分类号: H01L29/778 , H01L29/20 , H01L29/205
CPC分类号: H01L29/7783 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/207
摘要: A transistor comprises a stack of semiconductor materials including, in particular, a first sub-layer, carefully arranged and with a specific thickness, splitting the buffer layer into two portions and including a third material so that the difference in the piezoelectric and spontaneous polarisation coefficients between the material of the buffer layer and the third material induces, at a first interface between the first portion of the buffer layer and the first sub-layer, a first fixed surface electric charge generating an electrical field directed along the axis z so as to follow the two-dimensional gas to be contained in the channel.
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公开(公告)号:US20170110565A1
公开(公告)日:2017-04-20
申请号:US15300712
申请日:2015-04-03
IPC分类号: H01L29/778 , H01L29/36 , H01L29/205 , H01L29/20
CPC分类号: H01L29/7787 , H01L29/2003 , H01L29/205 , H01L29/32 , H01L29/36
摘要: A stack along a z-axis for a high-electron-mobility field-effect transistor, comprises: a buffer layer comprising a first semiconductor material comprising a binary, ternary or quaternary nitride compound having a first bandgap, a barrier layer comprising a second semiconductor material comprising a binary, ternary or quaternary nitride compound and having a second bandgap, the second bandgap wider than the first bandgap, a heterojunction between the buffer and barrier layers and, a two-dimensional electron gas located in an XY plane perpendicular to the z-axis and in the vicinity of the heterojunction wherein: the buffer layer comprises a zone comprising fixed negative charges of density per unit volume higher than or equal to 1017 cm−3, the zone having a thickness smaller than or equal to 200 nm, the product of multiplication of the density per unit volume of fixed negative charges by the thickness of the zone between 1012 cm−2 and 3.1013 cm−2.
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公开(公告)号:US20220406925A1
公开(公告)日:2022-12-22
申请号:US17787566
申请日:2020-12-18
申请人: THALES
IPC分类号: H01L29/778 , H01L29/20
摘要: A high-mobility field-effect transistor, includes a stack along a Z axis, deposited on a substrate and comprising a buffer layer, a barrier layer, a heterojunction between the buffer layer and the barrier layer, and a two-dimensional electron gas localized in an XY plane perpendicular to the axis Z and in the vicinity of the heterojunction, a source, a drain, and a gate deposited on an upper face of the barrier layer, between the source and the drain, a first dielectric layer having a relative permittivity εr and a thickness e which are such that: 0.5 nm≤e/εr≤2 nm, a metal pad arranged between the gate and the drain and deposited on the first dielectric layer, the metal pad being electrically connected to the gate.
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