HEMT TRANSISTOR
    4.
    发明申请

    公开(公告)号:US20220406925A1

    公开(公告)日:2022-12-22

    申请号:US17787566

    申请日:2020-12-18

    申请人: THALES

    IPC分类号: H01L29/778 H01L29/20

    摘要: A high-mobility field-effect transistor, includes a stack along a Z axis, deposited on a substrate and comprising a buffer layer, a barrier layer, a heterojunction between the buffer layer and the barrier layer, and a two-dimensional electron gas localized in an XY plane perpendicular to the axis Z and in the vicinity of the heterojunction, a source, a drain, and a gate deposited on an upper face of the barrier layer, between the source and the drain, a first dielectric layer having a relative permittivity εr and a thickness e which are such that: 0.5 nm≤e/εr≤2 nm, a metal pad arranged between the gate and the drain and deposited on the first dielectric layer, the metal pad being electrically connected to the gate.