公开(公告)号：US20220293664A1

公开(公告)日：2022-09-15

申请号：US17752994

申请日：2022-05-25

Applicant: TOPPAN Inc.

Inventor： Yasutake AKENO ,  Reiko IWATA ,  Yuri NAGAI

IPC: H01L27/146

Abstract: A method of manufacturing a filter for a solid-state imaging element, including forming a color filter on a semiconductor substrate, forming an etching stopper layer on the semiconductor substrate and the color filter, forming an infrared cut precursor layer on the etching stopper layer, forming a resist pattern that covers a portion on the color filter in the infrared cut precursor layer, and forming an infrared cut filter by dry etching the infrared cut precursor layer using the resist pattern. The dry etching of the infrared cut precursor layer is conducted at an etching rate different from an etching rate of the etching stopper layer.

公开(公告)号：US20220317352A1

公开(公告)日：2022-10-06

申请号：US17847723

申请日：2022-06-23

Applicant: TOPPAN Inc.

Inventor： Reiko IWATA ,  Yuri NAGAI ,  Yasutake AKENO

IPC: G02B5/20 ,  G02B1/04 ,  H04N5/225

Abstract: A method for producing an infrared light cut filter, including forming an infrared light cut layer comprising an infrared light absorbing dye, forming a protective layer on the infrared light cut layer which provides protection against a stripping solution, forming a resist pattern on the protective layer, patterning the protective layer and the infrared light cut layer by dry etching based on the resist pattern, and removing the resist pattern from the protective layer by applying the stripping solution.