MANUFACTURING METHOD OF FILTER FOR SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD OF SOLID-STATE IMAGING ELEMENT

    公开(公告)号:US20220293664A1

    公开(公告)日:2022-09-15

    申请号:US17752994

    申请日:2022-05-25

    申请人: TOPPAN Inc.

    IPC分类号: H01L27/146

    摘要: A method of manufacturing a filter for a solid-state imaging element, including forming a color filter on a semiconductor substrate, forming an etching stopper layer on the semiconductor substrate and the color filter, forming an infrared cut precursor layer on the etching stopper layer, forming a resist pattern that covers a portion on the color filter in the infrared cut precursor layer, and forming an infrared cut filter by dry etching the infrared cut precursor layer using the resist pattern. The dry etching of the infrared cut precursor layer is conducted at an etching rate different from an etching rate of the etching stopper layer.