公开(公告)号：US12300723B2

公开(公告)日：2025-05-13

申请号：US17704882

申请日：2022-03-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jung-Chien Cheng ,  Kuo-Cheng Chiang ,  Shi Ning Ju ,  Guan-Lin Chen ,  Bo-Rong Lin ,  Chih-Hao Wang

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/66

Abstract: An integrated circuit includes a transistor having a plurality of semiconductor nanostructures arranged in a stack and corresponding to channel regions of the transistor. The transistor includes a source/drain region in contact with the channel regions. The transistor includes a silicide that extends downward along a side of the source/drain region.