公开(公告)号：US20230317674A1

公开(公告)日：2023-10-05

申请号：US18151160

申请日：2023-01-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che Chi SHIH ,  Cheng-Ting CHUNG ,  Han-Yu LIN ,  Wei-Yen WOON ,  Szuya LIAO

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/373 ,  H01L23/528

CPC classification number: H01L24/73 ,  H01L23/5226 ,  H01L23/3735 ,  H01L23/5283 ,  H01L2224/73251

Abstract: Semiconductor devices and methods are provided which facilitate improved thermal conductivity using a high-kappa dielectric bonding layer. In at least one example, a device is provided that includes a first substrate. A semiconductor device layer is disposed on the first substrate, and the semiconductor device layer includes one or more semiconductor devices. Frontside interconnect structure are disposed on the semiconductor device layer, and a bonding layer is disposed on the frontside interconnect structure. A second substrate is disposed on the bonding layer. The bonding layer has a thermal conductivity greater than 10 W/m·K.