公开(公告)号：US20210083082A1

公开(公告)日：2021-03-18

申请号：US16573892

申请日：2019-09-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Ching Cheng ,  Hung-Li Chiang ,  Chun-Chieh Lu ,  Ming-Yang Li ,  Tzu- Chiang Chen

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/45 ,  H01L29/66 ,  H01L29/20 ,  H01L29/04

Abstract: A process is provided to fabricate a finFET device having a semiconductor layer of a two-dimensional “2D” semiconductor material. The semiconductor layer of the 2D semiconductor material is a thin film layer formed over a dielectric fin-shaped structure. The 2D semiconductor layer extends over at least three surfaces of the dielectric fin structure, e.g., the upper surface and two sidewall surfaces. A vertical protrusion metal structure, referred to as “metal fin structure”, is formed about an edge of the dielectric fin structure and is used as a seed to grow the 2D semiconductor material.