公开(公告)号：US20200020364A1

公开(公告)日：2020-01-16

申请号：US16160397

申请日：2018-10-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Che TSAI ,  Cheng Hung LEE ,  Shih-Lien Linus LU ,  Yi-Ju CHEN

IPC: G11C7/08 ,  G11C7/12 ,  H04L9/32

Abstract: A memory storage device is fabricated using a semiconductor fabrication process. Often times, manufacturing variations and/or misalignment tolerances present within the semiconductor fabrication process can cause the memory storage device to differ from other memory storage devices similarly designed and fabricated by the semiconductor fabrication process. For example, uncontrollable random physical processes in the semiconductor fabrication process can cause small differences, such as differences in doping concentrations, oxide thicknesses, channel lengths, structural widths, and/or parasitics to provide some examples, between these memory storage devices. These small differences can cause bitlines within the memory storage device to be physically unique with no two bitlines being identical. As a result, the uncontrollable random physical processes in the semiconductor fabrication process can cause electronic data read from the memory storage device to propagate along the bitlines at different rates. This physical uniqueness of the bitlines can be utilized to implement a physical unclonable function (PUF) allowing the memory storage device to be differentiated from other memory storage devices similarly designed and fabricated by the semiconductor fabrication process.