公开(公告)号：US10297707B1

公开(公告)日：2019-05-21

申请号：US14042434

申请日：2013-09-30

申请人： Tatiana Globus ,  Pineas Paxton Marshall ,  Boris Gelmont ,  Lloyd Harriott ,  Naser Alijabbari ,  John C Bean ,  Joe C Campbell

发明人： Tatiana Globus ,  Pineas Paxton Marshall ,  Boris Gelmont ,  Lloyd Harriott ,  Naser Alijabbari ,  John C Bean ,  Joe C Campbell

IPC分类号： H01L31/18 ,  H01L31/072

摘要： A photovoltaic structure for absorption from the solar spectrum, includes a light transmitting substrate layer, a transparent electrode layer on the substrate layer, a direct band-gap, wide band-gap, nanocrystalline or microcrystalline, think film semiconducting first layer on the transparent electrode layer, a second think film layer comprising a narrow band-gap semiconductor on the first layer a second electrode layer on the second think film layer, and a protective layer on the second electrode layer. The structure has a hetero-structure at the boundary between the wide-band-gap layer and the second thin film layer. The second layer can be chalcogenide salt having an average thickness of 0.4 to 1.2 μm, and preferably an average thickness of 0.5 to 0.6 μm. The chalcogenide salt layer is a lead chalcogenide, such as a nanocrystaline lead sulfide, nanocrystalline lead selenide, or a nanocrystalline lead telluride.