公开(公告)号：US20170257088A1

公开(公告)日：2017-09-07

申请号：US15386252

申请日：2016-12-21

Applicant: Texas Instruments Incorporated

Inventor： Xiaoju Wu ,  Rajesh Keloth ,  Sudheer Prasad

IPC: H03K17/08 ,  H01L29/417 ,  H01L29/78 ,  H01L27/02 ,  H01L29/06

CPC classification number: H03K17/08 ,  H01L27/0262 ,  H01L29/063 ,  H01L29/41775 ,  H01L29/7835 ,  H03K17/08142 ,  H03K17/6874 ,  H03K2217/0018

Abstract: An interface device includes an NPN structure along a horizontal surface of a p-doped substrate. The NPN structure has a first n-doped region coupled to an output terminal, a p-doped region surrounding the first n-doped region and coupled to the output terminal, and a second n-doped region separated from the first n-doped region by the p-doped region. The interface device also includes a PNP structure along a vertical depth of the p-doped substrate. The PNP structure includes the p-doped region, an n-doped layer under the p-doped region, and the p-doped substrate. Advantageously, the interface device can withstand high voltage swing (both positive and negative), prevent sinking and sourcing large load current, and avoid entering into a low resistance mode during power down operations.