BODY-CONTROL-DEVICE FOR A BI-DIRECTIONAL TRANSISTOR

    公开(公告)号:US20190013807A1

    公开(公告)日:2019-01-10

    申请号:US15861200

    申请日:2018-01-03

    申请人: NXP USA, Inc.

    摘要: A body-control-device for a bi-directional transistor, said bi-directional transistor having a first-transistor-channel-terminal, a second-transistor-channel-terminal, a transistor-control-terminal and a transistor-body-terminal. The body-control-device comprises a body-control-terminal connectable to the transistor-body-terminal of the bi-directional transistor, a first-body-channel-terminal connectable to the first-transistor-channel-terminal of the bi-directional transistor, a second-body-channel-terminal connectable to the second-transistor-channel-terminal of the bi-directional transistor, a negative-voltage-source and a switching-circuit configured to selectively provide an offset-first-circuit-path between the first-body-channel-terminal and the body-control-terminal, wherein the offset-first-circuit-path includes the negative-voltage-source such that it provides a negative voltage bias between the body-control-terminal and the first-body-channel-terminal.

    Switched mode power supply converter

    公开(公告)号:US09991776B2

    公开(公告)日:2018-06-05

    申请号:US15139921

    申请日:2016-04-27

    摘要: A method and apparatus for switched mode power supply (SMPS) system includes circuitry configured to produce a voltage output based on an input voltage, the SMPS circuitry includes inductive, capacitive and switching elements configured to generate the voltage output. The switching elements include at least one set of cascode coupled devices, each set of cascode coupled devices including a high electron mobility transistor (HEMT) and one of a diode and a field effect transistor (FET) in a cascode coupling. A controller produces a signal to a gate terminal of the FET of the sets of cascode coupled devices to drive the HEMT switching rate to adjust the output voltage. The circuitry of the SMPS further includes circuitry to couple the substrate of at least one HEMT to a high voltage node of the SMPS system to reduce large voltage spikes or dv/dts.

    Supply-switching system
    8.
    发明授权

    公开(公告)号:US09966793B2

    公开(公告)日:2018-05-08

    申请号:US15646085

    申请日:2017-07-10

    申请人: NXP USA, Inc.

    摘要: A system for providing a first voltage generated by a main supply and a second voltage generated by a battery to an integrated circuit (IC) includes supply-selection, control logic and switching circuits. The supply-selection circuit includes first, second, and third transistors. The switching circuit includes fourth and fifth transistors that supply the first and second voltages to the IC when switched on. The supply-selection circuit selects and provides the higher of the first and second voltages to body terminals of the fourth and fifth transistors for maintaining required body-bias voltage conditions. The control logic circuit generates a first control signal as long as the first voltage is within a predetermined range for keeping the fourth transistor switched on and a second control signal when the first voltage is not within the predetermined range for switching on the fifth transistor to supply the second voltage.

    POWER DEVICE FOR HIGH VOLTAGE AND HIGH CURRENT SWITCHING

    公开(公告)号:US20180123585A1

    公开(公告)日:2018-05-03

    申请号:US15706121

    申请日:2017-09-15

    IPC分类号: H03K17/687 H03K7/08

    摘要: An apparatus includes a circuitry to perform a high current and/or a high voltage switching. The circuitry includes a first Gallium Nitride (GaN) on a silicon (Si) substrate lateral field effect transistor. A source terminal of the first GaN lateral field effect transistor on the Si substrate includes an electrical connection to backside of P-type Si substrate through a high voltage isolated resistor that is coupled to a source terminal or a second resistor that is operably coupled to a drain terminal and a substrate terminal. The high voltage isolated resistor and the second resistor cause to a leakage current from the drain terminal to the source terminal via a buffer layer. The leakage current equalizes the voltage drop on the first GaN lateral field effect transistor on the Si substrate to a voltage drop on a serially connected second GaN lateral field effect transistor on the Si substrate.