ADAPTIVE THERMAL OVERSHOOT AND CURRENT LIMITING PROTECTION FOR MOSFETS

    公开(公告)号:US20200161293A1

    公开(公告)日:2020-05-21

    申请号:US16751491

    申请日:2020-01-24

    Abstract: In a described example, an apparatus includes: a first metal oxide semiconductor field effect transistor (MOSFET) coupled between a first input terminal for receiving a supply voltage and an output terminal for coupling to a load, and having a first gate terminal; an enable terminal coupled to the first gate terminal for receiving an enable signal; a first current mirror coupled between the first input terminal and a first terminal of a first series resistor and having an input coupled to the first gate terminal; and a second MOSFET coupled between the first gate terminal and the output terminal, and having a second gate terminal coupled to the first terminal of the first series resistor, the first series resistor having a second terminal coupled to the output terminal.

    ADAPTIVE THERMAL OVERSHOOT AND CURRENT LIMITING PROTECTION FOR MOSFETS

    公开(公告)号:US20210104515A1

    公开(公告)日:2021-04-08

    申请号:US17122682

    申请日:2020-12-15

    Abstract: In a described example, an apparatus includes: a first metal oxide semiconductor field effect transistor (MOSFET) coupled between a first input terminal for receiving a supply voltage and an output terminal for coupling to a load, and having a first gate terminal; an enable terminal coupled to the first gate terminal for receiving an enable signal; a first current mirror coupled between the first input terminal and a first terminal of a first series resistor and having an input coupled to the first gate terminal; and a second MOSFET coupled between the first gate terminal and the output terminal, and having a second gate terminal coupled to the first terminal of the first series resistor, the first series resistor having a second terminal coupled to the output terminal.

    Adaptive thermal overshoot and current limiting protection for MOSFETs

    公开(公告)号:US11367719B2

    公开(公告)日:2022-06-21

    申请号:US17122682

    申请日:2020-12-15

    Abstract: In a described example, an apparatus includes: a first metal oxide semiconductor field effect transistor (MOSFET) coupled between a first input terminal for receiving a supply voltage and an output terminal for coupling to a load, and having a first gate terminal; an enable terminal coupled to the first gate terminal for receiving an enable signal; a first current mirror coupled between the first input terminal and a first terminal of a first series resistor and having an input coupled to the first gate terminal; and a second MOSFET coupled between the first gate terminal and the output terminal, and having a second gate terminal coupled to the first terminal of the first series resistor, the first series resistor having a second terminal coupled to the output terminal.

    Adaptive thermal overshoot and current limiting protection for MOSFETs

    公开(公告)号:US10896905B2

    公开(公告)日:2021-01-19

    申请号:US16751491

    申请日:2020-01-24

    Abstract: In a described example, an apparatus includes: a first metal oxide semiconductor field effect transistor (MOSFET) coupled between a first input terminal for receiving a supply voltage and an output terminal for coupling to a load, and having a first gate terminal; an enable terminal coupled to the first gate terminal for receiving an enable signal; a first current mirror coupled between the first input terminal and a first terminal of a first series resistor and having an input coupled to the first gate terminal; and a second MOSFET coupled between the first gate terminal and the output terminal, and having a second gate terminal coupled to the first terminal of the first series resistor, the first series resistor having a second terminal coupled to the output terminal.

    Adaptive thermal overshoot and current limiting protection for MOSFETs

    公开(公告)号:US10586791B2

    公开(公告)日:2020-03-10

    申请号:US16035007

    申请日:2018-07-13

    Abstract: In a described example, an apparatus includes: a first metal oxide semiconductor field effect transistor (MOSFET) coupled between a first input terminal for receiving a supply voltage and an output terminal for coupling to a load, and having a first gate terminal; an enable terminal coupled to the first gate terminal for receiving an enable signal; a first current mirror coupled between the first input terminal and a first terminal of a first series resistor and having an input coupled to the first gate terminal; and a second MOSFET coupled between the first gate terminal and the output terminal, and having a second gate terminal coupled to the first terminal of the first series resistor, the first series resistor having a second terminal coupled to the output terminal.

    ADAPTIVE THERMAL OVERSHOOT AND CURRENT LIMITING PROTECTION FOR MOSFETS

    公开(公告)号:US20190279977A1

    公开(公告)日:2019-09-12

    申请号:US16035007

    申请日:2018-07-13

    Abstract: In a described example, an apparatus includes: a first metal oxide semiconductor field effect transistor (MOSFET) coupled between a first input terminal for receiving a supply voltage and an output terminal for coupling to a load, and having a first gate terminal; an enable terminal coupled to the first gate terminal for receiving an enable signal; a first current mirror coupled between the first input terminal and a first terminal of a first series resistor and having an input coupled to the first gate terminal; and a second MOSFET coupled between the first gate terminal and the output terminal, and having a second gate terminal coupled to the first terminal of the first series resistor, the first series resistor having a second terminal coupled to the output terminal.

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