公开(公告)号：US20250084530A1

公开(公告)日：2025-03-13

申请号：US18819238

申请日：2024-08-29

Applicant: Tokyo Electron Limited

Inventor： Yohei MATSUYAMA ,  Ken OKOSHI ,  Yuki KIKUCHI

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02

Abstract: A film-forming method according to an aspect of the present disclosure forms a film containing a silicon atom and a nitrogen atom on a surface of a substrate including a metal film at the surface of the substrate. The film-forming method includes: supplying a boron-containing gas and a first nitriding gas to the substrate, thereby forming a first film on the surface, the first film containing a boron atom and a nitrogen atom; and supplying a silicon-containing gas and a second nitriding gas to the substrate, thereby forming a second film on the first film, the second film containing a silicon atom and a nitrogen atom.

公开(公告)号：US20250043415A1

公开(公告)日：2025-02-06

申请号：US18776812

申请日：2024-07-18

Applicant: Tokyo Electron Limited

Inventor： Yohei MATSUYAMA ,  Daichi ITO ,  Takeshi OYAMA

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/52

Abstract: A film deposition method includes forming a seed layer containing silicon atoms and nitrogen atoms on a metal film of a substrate by supplying a first silicon-containing gas and a first nitriding gas to the substrate in a state where the substrate is maintained at a first temperature; and forming a bulk layer containing silicon atoms and nitrogen atoms on the seed layer by supplying a second silicon-containing gas and a second nitriding gas to the substrate in a state where the substrate is maintained at a second temperature greater than the first temperature.