公开(公告)号：US20200299835A1

公开(公告)日：2020-09-24

申请号：US16815181

申请日：2020-03-11

Applicant: Tokyo Electron Limited

Inventor： Jun OGAWA ,  Hiroyuki WADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA

IPC: C23C16/44 ,  C23C16/34

Abstract: A method of cleaning a deposition apparatus is provided. The method includes cleaning, with a cleaning gas formed into a plasma, an interior of a processing vessel on which a silicon nitride film is deposited. The cleaning gas includes a fluorine-containing gas and oxygen gas.

公开(公告)号：US20180037992A1

公开(公告)日：2018-02-08

申请号：US15669444

申请日：2017-08-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takeshi OYAMA ,  Jun OGAWA

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/34 ,  H01L21/02 ,  H01L21/687

CPC classification number: C23C16/45529 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

Abstract: A silicon nitride film forming method for forming a silicon nitride film on a substrate to be processed, includes forming a silicon nitride film doped with a predetermined amount of titanium by repeating, a predetermined number of times, forming a silicon nitride film by repeating, a first number of times, a process of causing a silicon source gas to be adsorbed onto the substrate and a process of nitriding the adsorbed silicon source gas with plasma of a nitriding gas, and forming a titanium nitride film by repeating, a second number of times, a process of causing a titanium source gas containing chlorine to be adsorbed onto the substrate and a process of nitriding the adsorbed titanium source gas with the plasma of the nitriding gas.

公开(公告)号：US20220238335A1

公开(公告)日：2022-07-28

申请号：US17647185

申请日：2022-01-06

Applicant: Tokyo Electron Limited

Inventor： Takeshi OYAMA ,  Kiwamu ITO ,  Yamato TONEGAWA

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/36 ,  C23C16/34 ,  C23C16/455

Abstract: A method for forming a film, the method including: forming a SiCN seed layer on a substrate by a thermal ALD, forming a SiN protective layer on the SiCN seed layer by a thermal ALD, and forming a SiN bulk layer on the SiN protective layer by a plasma enhanced ALD.

公开(公告)号：US20210130950A1

公开(公告)日：2021-05-06

申请号：US17086634

申请日：2020-11-02

Applicant: Tokyo Electron Limited

Inventor： Hideomi HANE ,  Takeshi OYAMA ,  Kentaro OSHIMO ,  Yusuke SUZUKI ,  Jun OGAWA

IPC: C23C16/44 ,  C23C16/511 ,  C23C16/455

Abstract: A processing method according to one aspect of the present disclosure includes varying pressure of a processing chamber in a state in which a plasma of a purge gas is formed in the processing chamber, the varying including removing a film deposited in the processing chamber, with the formed plasma.

公开(公告)号：US20250043415A1

公开(公告)日：2025-02-06

申请号：US18776812

申请日：2024-07-18

Applicant: Tokyo Electron Limited

Inventor： Yohei MATSUYAMA ,  Daichi ITO ,  Takeshi OYAMA

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/52

Abstract: A film deposition method includes forming a seed layer containing silicon atoms and nitrogen atoms on a metal film of a substrate by supplying a first silicon-containing gas and a first nitriding gas to the substrate in a state where the substrate is maintained at a first temperature; and forming a bulk layer containing silicon atoms and nitrogen atoms on the seed layer by supplying a second silicon-containing gas and a second nitriding gas to the substrate in a state where the substrate is maintained at a second temperature greater than the first temperature.

公开(公告)号：US20170218517A1

公开(公告)日：2017-08-03

申请号：US15420322

申请日：2017-01-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA

IPC: C23C16/511 ,  C23C16/34 ,  C23C16/455

CPC classification number: C23C16/345 ,  C23C16/045 ,  C23C16/45536 ,  H01J37/32192 ,  H01J37/32449

Abstract: A method of forming a nitride film in a fine recess formed in a surface of a substrate to be processed, by repeating a process, which includes adsorbing a film forming raw material gas onto the substrate and nitriding the adsorbed film forming raw material gas. The nitriding the adsorbed film forming raw material gas includes converting a NH3 gas as a nitriding gas, and an adsorption inhibiting gas for inhibiting adsorption of the NH3 gas into radicals and supplying the radicals onto the substrate.

公开(公告)号：US20210054502A1

公开(公告)日：2021-02-25

申请号：US16993432

申请日：2020-08-14

Applicant: Tokyo Electron Limited

Inventor： Hideomi HANE ,  Shimon OTSUKI ,  Takeshi OYAMA ,  Ren MUKOUYAMA ,  Jun OGAWA ,  Noriaki FUKIAGE

IPC: C23C16/34 ,  H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  C23C16/52

Abstract: There is provided a method of forming a silicon nitride film on a substrate having first and second films formed thereon, wherein the first film and the second film have different incubation times. The method includes: supplying a processing gas composed of a silicon halide having Si—Si bonds to the substrate; supplying a non-plasmarized second nitriding gas to the substrate; forming a thin silicon nitride layer covering the first film and the second film by repeating the supplying the processing gas and the supplying the second nitriding gas in a sequential order; supplying a plasmarized modifying gas to the substrate and modifying the thin silicon nitride layer; and forming the silicon nitride film on the modified thin silicon nitride layer by supplying the raw material gas and the first nitriding gas to the substrate.

公开(公告)号：US20210054501A1

公开(公告)日：2021-02-25

申请号：US16989103

申请日：2020-08-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi HANE ,  Takeshi OYAMA ,  Shimon OTSUKI ,  Ren MUKOUYAMA ,  Noriaki FUKIAGE ,  Jun OGAWA

IPC: C23C16/34 ,  H05H1/24 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02

Abstract: A film forming method of forming a silicon nitride film on a substrate, which includes a first film and a second film having different incubation times when a source gas containing silicon and a first nitriding gas for nitriding the silicon are supplied, includes: supplying a plasmarized hydrogen gas to the substrate; supplying a processing gas formed of silicon halide to the substrate; forming a thin layer of silicon covering the first film and the second film by alternately and repeatedly performing the supplying the plasmarized hydrogen gas and the supplying the processing gas; forming a thin layer of silicon nitride by supplying a second nitriding gas for nitriding the thin layer of silicon to the substrate; and forming the silicon nitride film on the thin layer of the silicon nitride by supplying the source gas and the first nitriding gas to the substrate.

公开(公告)号：US20190127849A1

公开(公告)日：2019-05-02

申请号：US16171667

申请日：2018-10-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi HANE ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Takeshi OYAMA ,  Hiroaki IKEGAWA ,  Jun OGAWA

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/458 ,  C23C16/46 ,  H01L21/687 ,  H01L21/02

Abstract: There is provided a film forming apparatus for performing a film forming process by supplying a film forming gas to a substrate in a vacuum atmosphere, comprising: a processing container in which a mounting part for mounting a substrate thereon is provided; a heating part configured to heat the substrate mounted on the mounting part; an exhaust part configured to evacuate an inside of the processing container; a cooling gas supply part configured to supply a cooling gas into the processing container; a purge gas supply part configured to supply a purge gas into the processing container; and a control part configured to output a control signal so as to execute a step of applying a stress to a thin film formed inside the processing container.

公开(公告)号：US20180245216A1

公开(公告)日：2018-08-30

申请号：US15899672

申请日：2018-02-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun OGAWA ,  Noriaki FUKIAGE ,  Shimon OTSUKI ,  Muneyuki OTANI ,  Takayuki KARAKAWA ,  Takeshi OYAMA ,  Masahide IWASAKI

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/683 ,  C23C16/34

CPC classification number: C23C16/4584 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/511 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/6835

Abstract: A film forming apparatus for carrying out a film forming process on a substrate by performing a cycle of sequentially supplying a first processing gas and a second processing gas a plurality of times in a vacuum container, includes: a rotary table having one surface on which a substrate mounting region for mounting a substrate is formed; a first gas supply part including a gas discharge portion having gas discharge holes of a first gas with a uniform hole diameter, an exhaust port surrounding the gas discharge portion, and a purge gas discharge port surrounding the gas discharge portion, which are formed on an opposing surface opposite the rotary table; a second gas supply part configured to supply a second gas to a region spaced apart in a circumferential direction of the rotary table from the first gas supply part; and an evacuation port configured to evacuate the vacuum container.