公开(公告)号：USRE47093E1

公开(公告)日：2018-10-23

申请号：US15292073

申请日：2016-10-12

Applicant: Toshiba Memory Corporation

Inventor： Hiroshi Tokue ,  Ikuo Yoneda ,  Ryoichi Inanami

IPC: B29C59/02 ,  G01B11/10 ,  B29C43/02 ,  B82Y10/00

Abstract: An imprint pattern forming method includes contacting a template with a pattern in a front surface with an imprint material formed in a substrate to fill the imprint material into the pattern, curing the imprint material filled in the pattern to form an imprint material pattern, and after forming the imprint material pattern, separating the template from the imprint material pattern while applying pressure to the back surface of the template.