公开(公告)号：US09096426B2

公开(公告)日：2015-08-04

申请号：US13857343

申请日：2013-04-05

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Gabriel I. Smith ,  Brendan Hanrahan ,  Christopher M Waits ,  Ronald G Polcawich ,  Luz Sanchez ,  Sarah Salah Bedair

IPC: H01L29/06 ,  B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00396 ,  B81B3/0018 ,  B81C1/00349 ,  H01L21/4857 ,  H01L23/49822 ,  H01L41/0472 ,  H01L41/0831 ,  H01L41/27 ,  H01L41/332 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A physical structure and a method for forming a electronic devices on a substrate comprising: providing a substrate; forming a plurality of layers on the substrate, the layers comprising at least two layers of conducting material and a layer of insulating material therebetween; depositing photoresist material onto predetermined regions of the plurality of layers, the photoresist material varying in thickness; utilizing gray scale illumination on the photoresist material; removing a portion of the layers using physical etching to expose predetermined portions of the conducting layers. Optionally, the photoresist may be utilized on a plurality of discrete electronic devices concurrently, such that the gray scale illumination is conducted on a plurality of discrete electronic devices concurrently. Similarly, the physical etching may be conducted on the discrete electronic devices concurrently; removing different thicknesses of material concurrently. Also claimed is a product made by the claimed method.

Abstract translation: 一种在衬底上形成电子器件的物理结构和方法，包括：提供衬底; 在所述基底上形成多个层，所述层包括至少两层导电材料和其间的绝缘材料层; 将光致抗蚀剂材料沉积到多个层的预定区域上，光致抗蚀剂材料的厚度变化; 利用光刻胶材料上的灰度照明; 使用物理蚀刻去除一部分层以暴露导电层的预定部分。 可选地，光致抗蚀剂可以同时用在多个分立的电子设备上，使得灰度照明同时在多个分立的电子设备上进行。 类似地，物理蚀刻可以在分立的电子设备上同时进行; 同时去除不同厚度的材料。 还要求保护的是通过所要求保护的方法制造的产品。