公开(公告)号：US10971502B2

公开(公告)日：2021-04-06

申请号：US16297722

申请日：2019-03-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Hui Huang ,  Tsung-Hsun Wu ,  Po-Lin Chen

IPC: H01L27/11 ,  H01L23/528 ,  G11C11/412

Abstract: An SRAM structure includes a substrate. A first active region, a second active region, a third active region and a fourth active region are disposed on the substrate. A first gate structure includes a first part, a second part and a third part disposed on the substrate. The first part and the third part are perpendicular to the first active region. The second part is parallel to the first active region. The first part covers the first active region, the second active region and the fourth active region. The third part covers the fourth active region. The second part is disposed on an insulating region between the second active region and the fourth active region, and the second part contacts the first part and the third part.

公开(公告)号：US20200258891A1

公开(公告)日：2020-08-13

申请号：US16297722

申请日：2019-03-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Hui Huang ,  Tsung-Hsun Wu ,  Po-Lin Chen

IPC: H01L27/11 ,  H01L23/528 ,  G11C11/412

Abstract: An SRAM structure includes a substrate. A first active region, a second active region, a third active region and a fourth active region are disposed on the substrate. A first gate structure includes a first part, a second part and a third part disposed on the substrate. The first part and the third part are perpendicular to the first active region. The second part is parallel to the first active region. The first part covers the first active region, the second active region and the fourth active region. The third part covers the fourth active region. The second part is disposed on an insulating region between the second active region and the fourth active region, and the second part contacts the first part and the third part.