公开(公告)号：US20250015186A1

公开(公告)日：2025-01-09

申请号：US18227299

申请日：2023-07-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hung-Chun Lee ,  Chih-Yi Wang ,  Wei-Che Chen ,  Ya-Ting Hu ,  Yao-Jhan Wang ,  Kun-Szu Tseng ,  Feng-Yun Cheng ,  Shyan-Liang Chou

IPC: H01L29/78 ,  H01L25/16

Abstract: The invention provides a semiconductor structure, which comprises a middle/high voltage device region and a low voltage device region, a plurality of fin structures disposed in the low voltage device region, and a protruding part located at a boundary Between the middle/high voltage device region and the low voltage device region. A top surface of the protruding part is flat, and the top surface of the protruding part is aligned with a flat top surface of the middle/high voltage device region.