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公开(公告)号：US20220365444A1
公开(公告)日：2022-11-17
申请号：US17348806
申请日：2021-06-16
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Guo-Xin HU , Yuh-Kwei CHAO , Chung-Yi CHIU
Abstract: An optical proximity correction (OPC) operation method and an OPC operation device are provided. The OPC operation method includes the following steps. A mask layout is obtained. If the mask layout contains at least one defect hotspot, at least one partial area pattern is extracted from the mask layout according to the at least defect hotspot. A machine learning model is used to analyze the local area pattern to obtain at least one OPC strategy. The OPC strategy is implemented to correct the mask layout.
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