公开(公告)号：US20220199408A1

公开(公告)日：2022-06-23

申请号：US17159183

申请日：2021-01-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hung-Kang Lien ,  Wei-Cheng Hung ,  Yu-Jen Liu

IPC: H01L21/308 ,  G06F30/392

Abstract: The invention provides a method for reducing mismatch of semiconductor device patterns, which comprises the following steps: defining an initial lithography area which partially overlaps a target gate structure, a first gate structure and a second gate structure; if a length and a width of the target gate structure are smaller than a preset channel length and a preset channel width respectively, adjusting and reducing the area of the initial lithography area to define a second lithography area. The second lithography area partially overlaps with the target gate structure but does not overlap with the first gate structure and the second gate structure, and the second lithography region is defined as the active area.

公开(公告)号：US11417532B2

公开(公告)日：2022-08-16

申请号：US17159183

申请日：2021-01-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hung-Kang Lien ,  Wei-Cheng Hung ,  Yu-Jen Liu

IPC: H01L21/308 ,  G06F30/392 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/8238

Abstract: The invention provides a method for reducing mismatch of semiconductor device patterns, which comprises the following steps: defining an initial lithography area which partially overlaps a target gate structure, a first gate structure and a second gate structure; if a length and a width of the target gate structure are smaller than a preset channel length and a preset channel width respectively, adjusting and reducing the area of the initial lithography area to define a second lithography area. The second lithography area partially overlaps with the target gate structure but does not overlap with the first gate structure and the second gate structure, and the second lithography region is defined as the active area.