公开(公告)号：US20230299158A1

公开(公告)日：2023-09-21

申请号：US17719351

申请日：2022-04-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuan-Yu Lu ,  Hou-Jen Chiu ,  Mei-Ling Chao ,  Tien-Hao Tang ,  Kuan-Cheng Su

IPC: H01L29/417 ,  H01L23/522 ,  H01L27/02

CPC classification number: H01L29/41775 ,  H01L23/5226 ,  H01L27/0266 ,  H01L29/7835

Abstract: An electrostatic discharge (ESD) protection device includes a semiconductor substrate, a gate structure, a source doped region, a drain doped region, source silicide patterns, and drain silicide patterns. The gate structure is disposed on the semiconductor substrate. The source doped region and the drain doped region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction, respectively. The source silicide patterns are disposed on the source doped region. The source silicide patterns are arranged in a second direction and separated from one another. The drain silicide patterns are disposed on the drain doped region. The drain silicide patterns are arranged in the second direction and separated from one another. The source silicide patterns and the drain silicide patterns are arranged misaligned with one another in the first direction.