公开(公告)号：US20220390828A1

公开(公告)日：2022-12-08

申请号：US17341342

申请日：2021-06-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Pin-Han Huang ,  Chih-Wei Hsu

IPC: G03F1/36

Abstract: A method of making mask patterns includes the following steps. A first octagon feature is created, wherein the first octagon feature includes first sides, second sides orthogonal to the first sides, and third sides, wherein each of the third sides connects the corresponding first side to the corresponding second side. An optical proximity correction (OPC) process is applied by using a computer to parallel shift the first sides, the second sides and the third sides of the first octagon feature respectively, and thus to create a second octagon feature. The second octagon feature is applied to make a pattern of a photomask. A method of forming a pattern in a layer is also provided, which includes printing a circular pattern on a surface of a layer by using an octagon pattern of a photomask.