公开(公告)号：US12094758B2

公开(公告)日：2024-09-17

申请号：US17843089

申请日：2022-06-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tien-Tsai Hung ,  Yi Liu ,  Guo-Hai Zhang ,  Ching-Hwa Tey

IPC: H01L21/762 ,  H01L23/00 ,  H01L27/12

CPC classification number: H01L21/76251 ,  H01L23/562 ,  H01L23/564 ,  H01L27/1203

Abstract: A semiconductor structure is provided. The semiconductor structure includes a wafer structure. The wafer structure has a normal region and a trimmed region adjacent to the normal region. A top surface of the trimmed region is lower than a top surface of the normal region. The semiconductor structure includes a dielectric layer and a conductive layer disposed on the wafer structure in the normal region and the trimmed region. The semiconductor structure includes a protective layer disposed on a portion of the dielectric layer in the trimmed region and a portion of the conductive layer in the trimmed region. The semiconductor structure includes another dielectric layer disposed on a portion of the dielectric layer in the normal region and a portion of the conductive layer in the normal region and on the protective layer.