公开(公告)号：US20210296286A1

公开(公告)日：2021-09-23

申请号：US16848848

申请日：2020-04-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Yu Shen ,  Tsung-Hsun Wu ,  Liang-Wei Chiu ,  Shih-Hao Liang

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/535 ,  H01L21/8234 ,  H01L25/00

Abstract: A semiconductor device includes a first metal-oxide semiconductor (MOS) transistor on a first substrate, a first interlayer dielectric (ILD) layer on the first MOS transistor, a second substrate on the first ILD layer, and a second MOS transistor on a second substrate. Preferably, the semiconductor device includes a static random access memory (SRAM) and the SRAM includes a first pull-up device, a second pull-up device, a first pull-down device, a second pull-down device, a first pass-gate device, a second pass-gate device, a read port pull-down device, and a read port pass-gate device, in which the read port pull-down device includes the first MOS transistor and the read port pass-gate device includes the second MOS transistor.

公开(公告)号：US11552052B2

公开(公告)日：2023-01-10

申请号：US16848848

申请日：2020-04-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Yu Shen ,  Tsung-Hsun Wu ,  Liang-Wei Chiu ,  Shih-Hao Liang

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/535 ,  H01L21/8234 ,  H01L25/00

Abstract: A semiconductor device includes a first metal-oxide semiconductor (MOS) transistor on a first substrate, a first interlayer dielectric (ILD) layer on the first MOS transistor, a second substrate on the first ILD layer, and a second MOS transistor on a second substrate. Preferably, the semiconductor device includes a static random access memory (SRAM) and the SRAM includes a first pull-up device, a second pull-up device, a first pull-down device, a second pull-down device, a first pass-gate device, a second pass-gate device, a read port pull-down device, and a read port pass-gate device, in which the read port pull-down device includes the first MOS transistor and the read port pass-gate device includes the second MOS transistor.