公开(公告)号：US20210296286A1

公开(公告)日：2021-09-23

申请号：US16848848

申请日：2020-04-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Yu Shen ,  Tsung-Hsun Wu ,  Liang-Wei Chiu ,  Shih-Hao Liang

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/535 ,  H01L21/8234 ,  H01L25/00

Abstract: A semiconductor device includes a first metal-oxide semiconductor (MOS) transistor on a first substrate, a first interlayer dielectric (ILD) layer on the first MOS transistor, a second substrate on the first ILD layer, and a second MOS transistor on a second substrate. Preferably, the semiconductor device includes a static random access memory (SRAM) and the SRAM includes a first pull-up device, a second pull-up device, a first pull-down device, a second pull-down device, a first pass-gate device, a second pass-gate device, a read port pull-down device, and a read port pass-gate device, in which the read port pull-down device includes the first MOS transistor and the read port pass-gate device includes the second MOS transistor.

公开(公告)号：US20250056781A1

公开(公告)日：2025-02-13

申请号：US18367471

申请日：2023-09-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Lin Chen ,  Tsung-Hsun Wu ,  Liang-Wei Chiu ,  Yao-Chin Cheng

IPC: H10B10/00

Abstract: A layout pattern of static random-access memory (SRAM) includes a substrate, a plurality of diffusion regions and a plurality of gate structures are located on the substrate, each diffusion region includes a first diffusion region, a second diffusion region, a third diffusion region, a fourth diffusion region, a fifth diffusion region, a sixth diffusion region, a seventh diffusion region and an eighth diffusion region, and each gate structure spans the plurality of diffusion regions. The plurality of gate structures include a first gate structure, the first gate structure includes a first L-shaped portion, which spans the first diffusion region and the fifth diffusion region and forms a first pull-down transistor (PD1), the first diffusion region is adjacent to and in direct contact with the fifth diffusion region.

公开(公告)号：US11552052B2

公开(公告)日：2023-01-10

申请号：US16848848

申请日：2020-04-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Yu Shen ,  Tsung-Hsun Wu ,  Liang-Wei Chiu ,  Shih-Hao Liang

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/535 ,  H01L21/8234 ,  H01L25/00

Abstract: A semiconductor device includes a first metal-oxide semiconductor (MOS) transistor on a first substrate, a first interlayer dielectric (ILD) layer on the first MOS transistor, a second substrate on the first ILD layer, and a second MOS transistor on a second substrate. Preferably, the semiconductor device includes a static random access memory (SRAM) and the SRAM includes a first pull-up device, a second pull-up device, a first pull-down device, a second pull-down device, a first pass-gate device, a second pass-gate device, a read port pull-down device, and a read port pass-gate device, in which the read port pull-down device includes the first MOS transistor and the read port pass-gate device includes the second MOS transistor.

公开(公告)号：US11322215B1

公开(公告)日：2022-05-03

申请号：US17326375

申请日：2021-05-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Pin Tsao ,  Tsung-Hsun Wu ,  Liang-Wei Chiu ,  Kuo-Hsing Lee ,  Sheng-Yuan Hsueh ,  Kun-Hsien Lee ,  Chang-Chien Wong

IPC: G11C17/14 ,  G11C17/16 ,  G11C17/18

Abstract: A one-time programmable (OTP) memory device includes a first memory cell, which further includes a first source line extending along a first direction on a substrate, a first word line extending along the first direction on one side of the first source line, a second word line extending along the first direction on another side of the first source line, a first diffusion region extending along a second direction adjacent to two sides of the first word line and the second word line, and a first metal interconnection connecting the first word line and the second word line.