公开(公告)号：US20200075480A1

公开(公告)日：2020-03-05

申请号：US16122807

申请日：2018-09-05

Applicant: United Microelectronics Corp.

Inventor： Min-Shiang Hsu ,  Yu-Han Tsai ,  Yi-Hsiu Chen ,  Chih-Sheng Chang

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532

Abstract: A structure of semiconductor device includes a substrate. An interconnection layer is formed on the substrate including a first inter-layer dielectric (ILD) layer over the substrate. A lower wiring structure is formed in the ILD layer. A hard mask layer is disposed on the first ILD layer. The hard mask layer has a first opening and a second opening being adjacent to expose the lower wiring structure. A second ILD layer is disposed on the hard mask layer. The second ILD layer has a via opening aligned to the first opening of the mask layer and a trench pattern connecting with the via opening. The second ILD layer has a protruding portion to fill the second opening of the mask layer. A metal line layer fills the via opening and the trench pattern in the second ILD layer and the first opening of the hard mask layer.

公开(公告)号：US12007435B2

公开(公告)日：2024-06-11

申请号：US17114515

申请日：2020-12-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Chih Chang ,  Yi-Hsiu Chen ,  Yuan-Fu Ko ,  Chih-Sheng Chang

IPC: G01R31/28

CPC classification number: G01R31/2884 ,  G01R31/2894 ,  Y10T29/49004

Abstract: A method of copper hillock detecting includes the following steps. A testkey structure is disposed on a substrate, wherein the testkey structure includes a lower metallization layer, an upper metallization layer, and a dielectric layer between the lower metallization layer and the upper metallization layer. A force voltage difference is applied to the lower metallization layer and the upper metallization layer under a test temperature and stress time. A changed sensing voltage difference to the lower metallization layer and the upper metallization layer is detected for detecting copper hillock.

公开(公告)号：US20220178992A1

公开(公告)日：2022-06-09

申请号：US17114515

申请日：2020-12-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Chih Chang ,  Yi-Hsiu Chen ,  Yuan-Fu Ko ,  Chih-Sheng Chang

IPC: G01R31/28

Abstract: A method of copper hillock detecting includes the following steps. A testkey structure is disposed on a substrate, wherein the testkey structure includes a lower metallization layer, an upper metallization layer, and a dielectric layer between the lower metallization layer and the upper metallization layer. A force voltage difference is applied to the lower metallization layer and the upper metallization layer under a test temperature and stress time. A changed sensing voltage difference to the lower metallization layer and the upper metallization layer is detected for detecting copper hillock.

公开(公告)号：US10600732B1

公开(公告)日：2020-03-24

申请号：US16122807

申请日：2018-09-05

Applicant: United Microelectronics Corp.

Inventor： Min-Shiang Hsu ,  Yu-Han Tsai ,  Yi-Hsiu Chen ,  Chih-Sheng Chang

IPC: H01L29/40 ,  H01L23/522 ,  H01L21/768 ,  H01L23/532

Abstract: A structure of semiconductor device includes a substrate. An interconnection layer is formed on the substrate including a first inter-layer dielectric (ILD) layer over the substrate. A lower wiring structure is formed in the ILD layer. A hard mask layer is disposed on the first ILD layer. The hard mask layer has a first opening and a second opening being adjacent to expose the lower wiring structure. A second ILD layer is disposed on the hard mask layer. The second ILD layer has a via opening aligned to the first opening of the mask layer and a trench pattern connecting with the via opening. The second ILD layer has a protruding portion to fill the second opening of the mask layer. A metal line layer fills the via opening and the trench pattern in the second ILD layer and the first opening of the hard mask layer.