公开(公告)号：US10475708B2

公开(公告)日：2019-11-12

申请号：US16299395

申请日：2019-03-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yong-Liang Li ,  Hao Su

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49

Abstract: A semiconductor structure includes a substrate and a CMOS structure. The CMOS structure includes a PMOS structure and a NMOS structure. The PMOS structure includes two first source/drain regions disposed in the substrate, a first gate dielectric disposed partially in the substrate between the first source/drain regions, and a fully silicided gate electrode disposed on the first gate dielectric. The NMOS structure includes two second source/drain regions disposed in the substrate, a second gate dielectric disposed partially in the substrate between the second source/drain regions, and a non-silicided conductive gate electrode disposed on the second gate dielectric.

公开(公告)号：US10276451B2

公开(公告)日：2019-04-30

申请号：US15679346

申请日：2017-08-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yong-Liang Li ,  Hao Su

IPC: H01L29/06 ,  H01L29/49 ,  H01L27/092 ,  H01L29/423 ,  H01L21/8238

Abstract: A semiconductor structure includes a substrate and a CMOS structure. The CMOS structure includes a PMOS structure and a NMOS structure. The PMOS structure includes two first source/drain regions disposed in the substrate, a first gate dielectric disposed partially in the substrate between the first source/drain regions, and a fully silicided gate electrode disposed on the first gate dielectric. The NMOS structure includes two second source/drain regions disposed in the substrate, a second gate dielectric disposed partially in the substrate between the second source/drain regions, and a non-silicided conductive gate electrode disposed on the second gate dielectric.