公开(公告)号：US20180016187A1

公开(公告)日：2018-01-18

申请号：US15719129

申请日：2017-09-28

Applicant: University of Electronic Science and Technology of China

Inventor： Deen Gu ,  Shiyang Xu ,  Yadong Jiang

IPC: C03C17/245

CPC classification number: C03C17/245 ,  C03C2217/218 ,  C03C2217/24 ,  C03C2218/154 ,  C03C2218/31 ,  C03C2218/32 ,  C03C2218/322

Abstract: A titanium-ruthenium co-doped vanadium dioxide thermosensitive film material and a preparation method thereof are provided, which relate to a technical field of uncooled infrared detectors and electronic films. The vanadium dioxide thermosensitive film material is prepared by using titanium and ruthenium as co-dopants, including a substrate and a titanium-ruthenium co-doped vanadium dioxide layer, wherein in the titanium-ruthenium co-doped vanadium dioxide layer, atomic percentages of the titanium, the ruthenium and the vanadium are respectively 4.0-7.0%, 0.5-1.5% and 25.0-30.0%, and a balance is the oxygen. The present invention also provides a preparation method of a titanium-ruthenium co-doped vanadium dioxide thermosensitive film material, including a step of using a titanium-ruthenium-vanadium alloy target as a source material and using a reactive sputtering method, or using a titanium target, a ruthenium target and a vanadium target as sputtering sources and using a co-reactive sputtering method.