公开(公告)号：US20040253448A1

公开(公告)日：2004-12-16

申请号：US10862358

申请日：2004-06-08

Applicant: VACLAB, INC.

Inventor： Fumio Watanabe

IPC: B32B015/04 ,  C23C008/34

CPC classification number: C23C8/36 ,  C22F1/02 ,  C22F1/08 ,  C23C8/02 ,  C23C28/048 ,  C23C30/00 ,  Y10T428/30

Abstract: The present invention relates to a manufacturing method of a material for vacuum device used in a vacuum apparatus that generates ultra-high vacuum and performs processing. Its constitution has the steps of: reducing pressure around the alloy of Cu and a doping element; increasing the temperature of the alloy to outgas hydrogen from the alloy, and gathering the doping element near the surface of the alloy and precipitating the doping element; and exposing the alloy to single oxygen, single nitrogen, mixed gas of oxygen and nitrogen, ozone (O3), oxygen content compound, nitrogen content compound or oxygen-nitrogen content compound, or a combination of them, or a plasma thereof while the temperature of the alloy is maintained at a range of room temperature or higher and the temperature of the alloy increased for outgassing hydrogen or lower, whereby it is reacted with the precipitated doping element so that one of an oxide film, a nitride film and an oxide-nitride film of the doping element is formed on a surface layer of the alloy.

Abstract translation: 本发明涉及一种用于真空装置的真空装置的制造方法，该真空装置产生超高真空并进行加工。 其结构具有以下步骤：减少Cu和掺杂元素周围的合金压力; 提高合金的温度以从合金中排出氢气，并将掺杂元素聚集在合金表面附近并沉淀掺杂元素; 并将该合金暴露于单氧，单氮，氧和氮的混合气体，臭氧（O3），氧含量化合物，氮含量化合物或氧 - 氮含量化合物或它们的组合，或其等离子体，同时温度 的合金的温度保持在室温以上的范围，并且合金的升温温度升高为放出氢气以下，由此与沉淀的掺杂元素反应，使得氧化物膜，氮化物膜和氧化物膜中的一种， 掺杂元素的氮化物膜形成在合金的表面层上。