公开(公告)号：US20240254593A1

公开(公告)日：2024-08-01

申请号：US18628786

申请日：2024-04-07

Applicant: CHANGZHOU UNIVERSITY

Inventor： Wei WEI ,  Libo YAO ,  Kunxia WEI ,  Xulong AN ,  Dandan WANG

IPC: C22C9/00 ,  C22F1/08 ,  C25D3/38 ,  C25D5/34 ,  C25D5/50 ,  C25D7/06

CPC classification number: C22C9/00 ,  C22F1/08 ,  C25D3/38 ,  C25D5/34 ,  C25D5/50 ,  C25D7/0614

Abstract: A method for preparing a graphene/copper composite deformed copper-chromium-zirconium alloy layered strip is provided. The method includes: obtaining a deformed copper-chromium-zirconium alloy strip by performing a solid solution treatment on a bulk copper-chromium-zirconium alloy, and performing a room temperature equal channel extrusion and a low temperature rolling on the bulk copper-chromium-zirconium alloy after the solid solution; obtaining a graphene/copper composite deformed copper-chromium-zirconium alloy strip by preparing a graphene/copper composite deposition liquid and performing a surface electrodeposition treatment on the deformed copper-chromium-zirconium alloy strip; obtaining the graphene/copper composite deformed copper-chromium-zirconium alloy layered strip with a rolling deformation of 65%-95% by stacking the graphene/copper composite deformed copper-chromium-zirconium alloy strips for 3-7 layers, and then performing a cold rolling, a single rolling deformation being 5%-10%; and performing a vacuum aging on the graphene/copper composite deformed copper-chromium-zirconium alloy layered strip.

公开(公告)号：US12037671B2

公开(公告)日：2024-07-16

申请号：US17603187

申请日：2020-04-09

Applicant: MATERION CORPORATION

Inventor： Carole L. Trybus ,  John C. Kuli, Jr. ,  Christopher J. Taylor

IPC: C22F1/08 ,  C21D8/02 ,  C22C9/00

CPC classification number: C22F1/08 ,  C21D8/0236 ,  C21D8/0273 ,  C22C9/00

Abstract: A copper alloy that is devoid of beryllium and has a 0.2% offset yield strength of at least 70 ksi and an electrical conductivity of at least 75% IACS is disclosed. The copper alloy comprises chromium, silicon, silver, titanium, zirconium, and balance copper. The alloy is prepared by cold working, solution annealing, and aging. The alloy can be used in several different applications.

公开(公告)号：US20240229209A9

公开(公告)日：2024-07-11

申请号：US18238619

申请日：2023-08-28

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Masahiro Kataoka ,  Keiichiro Oishi ,  Shinobu Satou ,  Kanta Dairaku

IPC: C22F1/08 ,  B22D11/00 ,  C22C1/02 ,  C22C9/02

CPC classification number: C22F1/08 ,  B22D11/005 ,  C22C1/02 ,  C22C9/02

Abstract: This continuous cast wire rod contains Cu: 62.0 mass % or greater and 70.0 mass % or less, Sn: 0.3 mass % or greater and 0.9 mass % or less, Zr: 0.0050 mass % or greater and 0.1000 mass % or less, and P: 0.0050 mass % or greater and 0.1000 mass % or less, with a balance being Zn and impurities, and a mass ratio Zr/P of Zr to P is 0.3 or greater.

公开(公告)号：US20240124955A1

公开(公告)日：2024-04-18

申请号：US18547409

申请日：2022-02-08

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Yosuke NAKASATO ,  Kazunari MAKI ,  Yasuhiro TSUGAWA ,  U TANI

IPC: C22C9/01 ,  B22D11/00 ,  C22C1/02 ,  C22C9/00 ,  C22F1/08 ,  C23C14/34 ,  H01J37/34

CPC classification number: C22C9/01 ,  B22D11/004 ,  C22C1/02 ,  C22C9/00 ,  C22F1/08 ,  C23C14/3414 ,  H01J37/3426 ,  H01J2237/332

Abstract: This hot-rolled copper alloy sheet contains Mg: 0.2 mass % or more and 2.1 mass % or less, Al: 0.4 mass % or more and 5.7 mass % or less, and Ag: 0.01 mass % or less, with a remainder being Cu and inevitable impurities, an area ratio of Cube orientation (area ratio of crystal orientation) measured by an EBSD method is 5% or less, an average KAM value when a boundary between adjacent pixels where an orientation difference between the pixels is 5° or more is regarded as a crystal grain boundary is 2.0 or less, and an average crystal grain size μ in a sheet-thickness central portion is 40 μm or less.

公开(公告)号：US11920228B2

公开(公告)日：2024-03-05

申请号：US17784062

申请日：2020-12-08

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Yoshiteru Akisaka ,  Naoki Miyashima ,  Kazunari Maki ,  Shinichi Funaki

IPC: C22C9/00 ,  C22F1/08

CPC classification number: C22C9/00 ,  C22F1/08

Abstract: Providing a copper alloy plate, in which center Mg concentration at a center part in a plate thickness direction 0.1 mass % or more and less than 0.3 mass %, center P concentration is 0.001 mass % or more and 0.2 mass % or less, and the balance is composed of Cu and inevitable impurities; in which surface Mg concentration at a surface is 70% or less of the center Mg concentration; in which a surface layer part defined by a prescribed thickness from the surface has a concentration gradient of Mg of 0.05 mass %/μm or more and 5 mass %/μm or less increasing from surface toward center part of the plate thickness direction; and in which restraint of color change of the surface and increase of electrical contact resistance, and adhesiveness of a plating film are excellent due to maximum Mg concentration in the surface layer part is 90% of the center Mg concentration.

公开(公告)号：US20230356321A1

公开(公告)日：2023-11-09

申请号：US18341063

申请日：2023-06-26

Applicant: KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION ,  NGK INSULATORS, LTD.

Inventor： Osamu TAKAKUWA ,  Hisao MATSUNAGA ,  Takahiro ISHIKAWA ,  Hiromitsu UCHIYAMA ,  Masato SAKAKIBARA ,  Masaaki AKAIWA

IPC: C22C9/06 ,  C22F1/02 ,  C22C9/00 ,  C22F1/00 ,  B23K20/02 ,  C22F1/08 ,  B32B15/01

CPC classification number: B23K20/02 ,  B32B15/01 ,  C22C9/00 ,  C22C9/06 ,  C22F1/002 ,  C22F1/02 ,  C22F1/08

Abstract: There is provided a copper alloy bonded body composed of a plurality of members made of an age-hardenable copper alloy, the members diffusion-bonded to one another. The copper alloy bonded body has undergone solution annealing and an aging treatment, the content of beryllium in the age-hardenable copper alloy is 0.7% by weight or less, and (i) a bonding interface between the members has disappeared and/or (ii) a bonding interface between the members remains, and an oxide film at the bonding interface has a thickness of 0 nm or more and 5.0 nm or less.

公开(公告)号：US20230349035A1

公开(公告)日：2023-11-02

申请号：US18207721

申请日：2023-06-09

Applicant: JX NIPPON MINING & METALS

Inventor： Tomio Otsuki ,  Yasushi Moril

IPC: C23C14/34 ,  C22C9/06 ,  C22C9/01 ,  C22C9/05 ,  C22F1/08

CPC classification number: C23C14/3414 ,  C22C9/01 ,  C22C9/05 ,  C22C9/06 ,  C22F1/08

Abstract: A sputtering target according to one embodiment is an integrated sputtering target comprising a target portion and a backing plate portion, both of them being made of copper and unavoidable impurities, wherein a Vickers hardness Hv is 90 or more, and wherein a flat ratio of crystal grains in a cross section orthogonal to a sputtering surface is 0.35 or more and 0.65 or less.

公开(公告)号：US20230340693A1

公开(公告)日：2023-10-26

申请号：US17769404

申请日：2020-10-20

Applicant: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

Inventor： Ho Bum PARK ,  Ji Soo ROH ,  Jun Kyu JANG

IPC: C30B29/02 ,  C01B32/186 ,  H01B1/02 ,  C30B1/02 ,  C30B25/18 ,  C22F1/02 ,  C22F1/08

CPC classification number: C30B29/02 ,  C01B32/186 ,  H01B1/02 ,  C30B1/02 ,  C30B25/18 ,  C22F1/02 ,  C22F1/08

Abstract: The present disclosure manufactures a single-crystal metal film oriented only in the (111) crystal plane by bringing seed crystals comprising (111) oriented seeds or (111) single-crystalline seed crystals into contact with a polycrystalline metal precursor and performing heat treatment, thereby manufacturing a single-crystal metal film oriented only in the (111) crystal plane with a high single crystallization rate irrespective of the thickness and shape of the polycrystalline metal precursor. Additionally, the present disclosure obtains a large-area single-crystal metal film with adjusted orientation angle by introducing single-crystal seed crystals into a polycrystalline metal film at a predetermined angle of rotation and performing heat treatment, and manufactures large-area single-layer graphene with adjusted orientation angle using the same, and multilayer graphene with adjusted orientation angle between graphene by stacking the single-layer graphene.

公开(公告)号：US11788173B2

公开(公告)日：2023-10-17

申请号：US17436667

申请日：2019-12-23

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Keiichiro Oishi ,  Kouichi Suzaki ,  Hiroki Goto

IPC: C22C9/04 ,  C21D9/00 ,  C22F1/08 ,  B22D21/00 ,  C22C9/10

CPC classification number: C22C9/04 ,  B22D21/00 ,  C21D9/00 ,  C22C9/10 ,  C22F1/08

Abstract: This free-cutting copper alloy includes Cu: more than 58.0% and less than 65.0%, Si: more than 0.30% and less than 1.30%, Pb: more than 0.001% and 0.20% or less, Bi: more than 0.020% and 0.10% or less, and P: more than 0.001% and less than 0.20%, with the remainder being Zn and unavoidable impurities, a total amount of Fe, Mn, Co and Cr is less than 0.45%, a total amount of Sn and Al is less than 0.45%, relationships of 56.5≤[Cu]−4.7×[Si]+0.5×[Pb]+0.5×[Bi]−0.5×[P]≤59.5, and 0.025≤[Pb]+[Bi]

公开(公告)号：US20230326631A1

公开(公告)日：2023-10-12

申请号：US18022926

申请日：2021-07-16

Applicant: KOA CORPORATION

Inventor： Yoshitaka KUMEDA ,  Tadahiko YOSHIOKA

IPC: H01C1/00 ,  H01C7/13 ,  C22C9/05 ,  C22F1/08 ,  C22F1/02

CPC classification number: H01C1/00 ,  H01C7/13 ,  C22C9/05 ,  C22F1/08 ,  C22F1/02

Abstract: Provided is a current detection resistor, such as a shunt resistor, wherein a. low specific resistance and a small thermal electromotive force with respect to copper are achieved, while maintaining a low TCR. A resistance alloy for use in a current detection shunt resistor includes 4.5 to 5.5 mass % of manganese, 0.05 to 0.30 mass % of silicon, 0.10 to 0.30 mass % of iron, and a balance being copper, and has a specific resistance of 15 to 25 μΩ·m.