公开(公告)号：US12080783B2

公开(公告)日：2024-09-03

申请号：US16809970

申请日：2020-03-05

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Tianxiang Nan ,  Jonathon Schad

IPC: H10N50/20 ,  H01L29/66

CPC classification number: H01L29/66984 ,  H10N50/20

Abstract: Voltage-controlled spin field effect transistors (“spin transistors”) and methods for their use in switching applications are provided. In the spin transistors, spin current is transported from a spin injection contact to a spin detection contact through a multiferroic antiferromagnetic channel via magnon propagation. The spin current transport is modulated by the application of a gate voltage that increases the number of domain boundaries the multiferroic antiferromagnetic material.