公开(公告)号：US20240229292A1

公开(公告)日：2024-07-11

申请号：US18151550

申请日：2023-01-09

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Jungwoo Lee ,  Jieun Kim

IPC: C30B23/02 ,  C30B29/24 ,  C30B29/30 ,  C30B29/32 ,  C30B29/68

CPC classification number: C30B23/02 ,  C30B29/24 ,  C30B29/30 ,  C30B29/32 ,  C30B29/68

Abstract: Apparatus and methods for growing films of complex layered metal oxides with high stoichiometries and high crystal qualities are provided. The layered complex metal oxides include two or more metals and oxygen and have a layered structure. The methods, which are referred to as hybrid pulsed laser deposition (hybrid PLD), synergistically combine the advantages of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) to grow complex metal oxide films that include metals with very different vapor pressures.

公开(公告)号：US11749527B2

公开(公告)日：2023-09-05

申请号：US17814565

申请日：2022-07-25

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Jungwoo Lee

IPC: H01L21/02 ,  C23C14/08 ,  H01L29/24 ,  C23C14/28 ,  H01L29/778

CPC classification number: H01L21/02565 ,  C23C14/088 ,  C23C14/28 ,  H01L21/02414 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/778

Abstract: Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

公开(公告)号：US10566521B2

公开(公告)日：2020-02-18

申请号：US16019831

申请日：2018-06-27

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Tianxiang Nan ,  Trevor Jeffrey Anderson

IPC: G11C11/00 ,  H01L43/04 ,  H01L43/10 ,  G11C11/16 ,  G11C11/18 ,  H01L43/14 ,  H01L43/08

Abstract: Magnetic switching devices, including magnetic memory devices, are provided. The devices use high-quality crystalline films of 4d or 5d transition metal perovskite having a strong spin-orbit coupling (SOC) to produce spin-orbit torque in adjacent ferromagnetic materials via a strong spin-Hall effect. Spin-orbit torque can be generated by the devices with a high efficiency, even at or near room temperature.

公开(公告)号：US20190155063A1

公开(公告)日：2019-05-23

申请号：US16237804

申请日：2019-01-02

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Chang-Beom Eom ,  Jaeseong Lee ,  Daesu Lee ,  Sang June Cho ,  Dong Liu

IPC: G02F1/00 ,  H01P3/00 ,  G02F1/01 ,  G02F1/313

Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.

公开(公告)号：US12080783B2

公开(公告)日：2024-09-03

申请号：US16809970

申请日：2020-03-05

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Tianxiang Nan ,  Jonathon Schad

IPC: H10N50/20 ,  H01L29/66

CPC classification number: H01L29/66984 ,  H10N50/20

Abstract: Voltage-controlled spin field effect transistors (“spin transistors”) and methods for their use in switching applications are provided. In the spin transistors, spin current is transported from a spin injection contact to a spin detection contact through a multiferroic antiferromagnetic channel via magnon propagation. The spin current transport is modulated by the application of a gate voltage that increases the number of domain boundaries the multiferroic antiferromagnetic material.

公开(公告)号：US20220367184A1

公开(公告)日：2022-11-17

申请号：US17814565

申请日：2022-07-25

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Jungwoo Lee

IPC: H01L21/02 ,  H01L29/24 ,  C23C14/08 ,  C23C14/28

Abstract: Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

公开(公告)号：US11335781B2

公开(公告)日：2022-05-17

申请号：US15591454

申请日：2017-05-10

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Daesu Lee

IPC: H01L29/24 ,  H01L45/00 ,  H01L29/45 ,  H01L29/94 ,  H01L29/861 ,  H01L29/786 ,  H03K17/687 ,  H01L49/00

Abstract: Heterostructures that include a bilayer composed of epitaxial layers of vanadium dioxide having different rutile-to-monoclinic phase transition temperatures are provided. Also provided are electrical switches that incorporate the heterostructures. The bilayers are characterized in that they undergo a single-step, collective, metal-insulator transition at an electronic transition temperature. At temperatures below the electronic transition temperature, the layer of vanadium dioxide having the higher rutile-to-monoclinic phase transition temperature has an insulating monoclinic crystalline phase, which is converted to a metallic monoclinic crystalline phase at temperatures above the electronic transition temperature.

公开(公告)号：US20180337238A1

公开(公告)日：2018-11-22

申请号：US15596505

申请日：2017-05-16

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Hyungwoo Lee

IPC: H01L29/24 ,  H01L29/778

CPC classification number: H01L29/24 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/7781

Abstract: Oxide heterostructures that form spatially separated electron-hole bilayers are provided. Also provided are electronic devices that incorporate the oxide heterostructures. The oxide heterostructure includes a base layer of SrTiO3, a polar layer of LaAlO2, and a non-polar layer of SrTiO3. Within the oxide heterostructures, a two-dimensional hole gas (2DHG) is formed at the interface between the non-polar layer and the polar layer and a two-dimensional electron gas (2DEG) is formed at the interface between the polar layer and the base layer.

公开(公告)号：US12180610B2

公开(公告)日：2024-12-31

申请号：US18151550

申请日：2023-01-09

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Jungwoo Lee ,  Jieun Kim

IPC: C30B23/02 ,  C30B29/24 ,  C30B29/30 ,  C30B29/32 ,  C30B29/68

Abstract: Apparatus and methods for growing films of complex layered metal oxides with high stoichiometries and high crystal qualities are provided. The layered complex metal oxides include two or more metals and oxygen and have a layered structure. The methods, which are referred to as hybrid pulsed laser deposition (hybrid PLD), synergistically combine the advantages of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) to grow complex metal oxide films that include metals with very different vapor pressures.

公开(公告)号：US10804459B2

公开(公告)日：2020-10-13

申请号：US16225071

申请日：2018-12-19

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Tianxiang Nan

IPC: H01L43/10 ,  H01L43/04 ,  H01F10/12 ,  H01F10/00 ,  H01L43/06

Abstract: Spintronic devices based on metallic antiferromagnets having a non-collinear spin structure are provided. Also provided are methods for operating the devices. The spintronic devices are based on a bilayer structure that includes a spin torque layer of an antiferromagnetic material having a non-collinear triangular spin structure adjoining a layer of ferromagnetic material.