公开(公告)号：US11688675B1

公开(公告)日：2023-06-27

申请号：US17315229

申请日：2021-05-07

Applicant: XILINX, INC.

Inventor： Frank Peter Lambrecht ,  Po-Wei Chiu ,  Hong Shi

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/552

CPC classification number: H01L23/49822 ,  H01L21/4857 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/552

Abstract: Various noise isolation structures and methods for fabricating the same are presented. In one example, a substrate for chip package is provided. The substrate includes a core region, top build-up layers and bottom build-up layers. The top build-up layers are formed on a first side of the core region and the bottom build-up layers are formed on a second side of the core region that is opposite the first side. Routing circuitry formed in the bottom build-up layers is coupled to routing circuitry formed in the top build-up layers by vias formed through the core region. A void is formed in the bottom build-up layers. The void is configured as a noise isolation structure. The void has a sectional area that is different in at least two different distances from the core region.